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PMST4403

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SC-70. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorspmst4403factory-2.0.0extractor-text

Verified PMST4403

by Ray · last 6 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

6 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: PMST4403 · SC-70 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 13-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOT-323_SC-70
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-mon64eii/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.8)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ pmst4403.kicad_sym✓ pmst4403.kicad_mod✓ pmst4403.step
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Ray Publish 0.1.0 8e3fa82 15h ago

PMST4403

Nexperia · Bipolar (BJT) · SC-70

PMST4403 from Nexperia, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the PNP switching transistor; the device limits peak base current to -200 mA (single pulse, tp ≤ 1 ms, IBM).
2 E passive Emitter terminal of the PNP switching transistor; the device limits emitter-base voltage to -5 V (VEBO, open collector).
3 C passive Collector terminal of the PNP switching transistor; the device limits collector current to -600 mA (IC) and -800 mA peak (ICM) with VCEO of -40 V (open base).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SC-70
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -40 V open emitter 2
Collector-emitter voltage VCEO -40 V open base 2
Emitter-base voltage VEBO -5 V open collector 2
Collector current IC -600 mA 2
Peak collector current ICM -800 mA 2
Peak base current IBM -200 mA single pulse; tp ≤ 1 ms 2
Total power dissipation Ptot 200 mW Tamb ≤ 25 °C; device mounted on FR4 PCB, single-sided copper, standard footprint 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 625 K/W in free air; device mounted on FR4 PCB, single-sided copper, tin-plated and standard footprint 3
Collector-base cut-off current ICBO -50 nA VCB = -40 V; IE = 0 A; Tamb = 25 °C 4
Collector-base cut-off current ICBO -10 µA VCB = -40 V; IE = 0 A; Tj = 125 °C 4
Emitter-base cut-off current IEBO -50 nA VEB = -5 V; IC = 0 A; Tamb = 25 °C 4
DC current gain hFE 30 VCE = -1 V; IC = -0.1 mA; Tamb = 25 °C 4
DC current gain hFE 60 VCE = -1 V; IC = -1 mA; Tamb = 25 °C 4
DC current gain hFE 100 VCE = -1 V; IC = -10 mA; Tamb = 25 °C 4
DC current gain hFE 100 300 VCE = -2 V; IC = -150 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 4
DC current gain hFE 20 VCE = -2 V; IC = -500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 4
Collector-emitter saturation voltage VCEsat -400 mV IC = -150 mA; IB = -15 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 4
Collector-emitter saturation voltage VCEsat -750 mV IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 4
Base-emitter saturation voltage VBEsat -950 mV IC = -150 mA; IB = -15 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 4
Base-emitter saturation voltage VBEsat -1.3 V IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 4
Delay time td 15 ns 4
Rise time tr 30 ns 4
Turn-on time ton 40 ns 4
Storage time ts 300 ns 4
Fall time tf 50 ns 4
Turn-off time toff 350 ns IC = -150 mA; IBon = -15 mA; IBoff = 15 mA; Tamb = 25 °C 4
Collector capacitance CC 8.5 pF VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 4
Emitter capacitance CE 35 pF VEB = -500 mV; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C 4
Transition frequency fT 200 MHz VCE = -10 V; IC = -20 mA; f = 100 MHz; Tamb = 25 °C 4

CAD (KiCad official)

  • Symbol: PMST4403
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SC-70 (KiCad packages3D, STEP)
  • 3D model files: pmst4403-etched.step / pmst4403-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmst4403.step / pmst4403.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 4504d563d735582e, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF