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PMMT591A

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PMMT591A

Nexperia · Bipolar (BJT) · SOT-23

PMMT591A from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 base input Base terminal of the PNP BISS transistor; peak base current is limited to −1 A (IBM) in the limiting values.
2 emitter passive Emitter terminal of the PNP BISS transistor; emitter-base voltage is limited to −5 V (VEBO) in the limiting values.
3 collector passive Collector terminal of the PNP BISS transistor; limited to −40 V collector-emitter (VCEO), −1 A DC collector current (IC) and −2 A peak collector current (ICM).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -40 V open emitter 3
Collector-emitter voltage VCEO -40 V open base 3
Emitter-base voltage VEBO -5 V open collector 3
Collector current (DC) IC -1 A 3
Peak collector current ICM -2 A 3
Peak base current IBM -1 A 3
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C; note 1 3
Storage temperature Tstg -65 150 °C 3
Junction temperature Tj 150 °C 3
Operating ambient temperature Tamb -65 150 °C 3
Thermal resistance from junction to ambient Rth(j-a) 500 K/W note 1 4
Collector cut-off current ICBO -100 nA IE = 0; VCB = −30 V 4
Emitter cut-off current IEBO -100 nA IC = 0; VEB = −5 V 4
DC current gain hFE 300 VCE = −5 V; IC = −1 mA; note 1 4
DC current gain hFE 300 800 VCE = −5 V; IC = −100 mA; note 1 4
DC current gain hFE 250 VCE = −5 V; IC = −500 mA; note 1 4
DC current gain hFE 160 VCE = −5 V; IC = −1 A; note 1 4
Collector-emitter saturation voltage VCEsat -200 mV IC = −100 mA; IB = −1 mA; note 1 4
Collector-emitter saturation voltage VCEsat -350 mV IC = −500 mA; IB = −20 mA; note 1 4
Collector-emitter saturation voltage VCEsat -500 mV IC = −1 A; IB = −100 mA; note 1 4
Base-emitter saturation voltage VBEsat -1.1 V IC = −1 A; IB = −50 mA; note 1 4
Base-emitter voltage VBE -1 V VCE = −5 V; IC = −1 A; note 1 4
Collector capacitance Cc 12 pF IE = Ie = 0; VCB = −10 V; f = 1 MHz 4
Transition frequency fT 150 MHz IC = −50 mA; VCE = −10 V; f = 100 MHz 4

CAD (KiCad official)

  • Symbol: PMMT591A
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmmt591a-etched.step / pmmt591a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmmt591a.step / pmmt591a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 1e39cfbfab10be43, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF