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Ray Publish 0.1.0 897b8cd 12d ago

PMEG6010CEH-QX

Nexperia · Schottky Diodes · SOD-123F

PMEG6010CEH-QX from Nexperia, in a SOD-123F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the Schottky barrier rectifier; the marking bar on the package indicates the cathode.
2 A passive Anode of the Schottky barrier rectifier.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOD-123F
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
reverse voltage VR 60 V 2
forward current IF 1 A Tsp ≤ 55 °C 2
repetitive peak forward current IFRM 7 A tp ≤ 1 ms; δ ≤ 0.25 2
non-repetitive peak forward current IFSM 9 A tp = 8 ms; square wave; Tj(init) = 25 °C 2
total power dissipation Ptot 375 mW Tamb ≤ 25 °C; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint 2
total power dissipation Ptot 830 mW [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to ambient in free air Rth(j-a) 330 K/W in free air; [2] FR4 PCB, single-sided copper, tin-plated, standard footprint 3
thermal resistance from junction to ambient in free air Rth(j-a) 150 K/W in free air; [3] FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2 3
thermal resistance from junction to solder point Rth(j-sp) 60 K/W [4] soldering point of cathode tab 3
forward voltage VF 210 250 mV IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tj = 25 °C 3
forward voltage VF 270 310 mV IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tj = 25 °C 3
forward voltage VF 350 400 mV IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tj = 25 °C 3
forward voltage VF 460 530 mV IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed 3
forward voltage VF 510 580 mV IF = 700 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed 3
forward voltage VF 570 660 mV IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tj = 25 °C 3
reverse current IR 11 50 µA VR = 60 V; Tj = 25 °C 3
diode capacitance Cd 60 68 pF VR = 1 V; f = 1 MHz; Tj = 25 °C 3

CAD (KiCad official)

  • Symbol: PMEG6010CEH-QX
  • Footprint: Diode_SMD:D_SOD-123F
  • 3D model: SOD-123F (KiCad packages3D, STEP)
  • 3D model files: pmeg6010ceh-qx-etched.step / pmeg6010ceh-qx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmeg6010ceh-qx.step / pmeg6010ceh-qx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (9 pp, sha256 7075bc827bdd8a66, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF