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PMEG2015EJ

Public Made by Adom

by adom

Nexperia Schottky Barrier Diodes (SBD), SOD-323F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PMEG2015EJ

Nexperia · Schottky Barrier Diodes (SBD) · SOD-323F

PMEG2015EJ from Nexperia, in a SOD-323F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the Schottky barrier rectifier; reverse voltage up to 20 V and forward current up to 1.5 A (Tsp ≤ 55 °C).
2 A passive Anode of the Schottky barrier rectifier; forward voltage typically 560 mV (max 660 mV) at IF = 1.5 A, Tamb = 25 °C.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOD-323F
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward voltage VF 240 270 mV IF = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
Forward voltage VF 300 350 mV IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
Forward voltage VF 400 460 mV IF = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
Forward voltage VF 480 550 mV IF = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
Forward voltage VF 560 660 mV IF = 1.5 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
Reverse current IR 5 10 µA VR = 5 V; Tamb = 25 °C 3
Reverse current IR 7 20 µA VR = 8 V; Tamb = 25 °C 3
Reverse current IR 8 30 µA VR = 10 V; Tamb = 25 °C 3
Reverse current IR 10 50 µA VR = 15 V; Tamb = 25 °C 3
Reverse current IR 15 70 µA VR = 20 V; Tamb = 25 °C 3
Diode capacitance Cd 40 50 pF VR = 1 V; f = 1 MHz; Tamb = 25 °C 3
Reverse voltage VR 20 V 2
Forward current IF 1.5 A Tsp ≤ 55 °C 2
Repetitive peak forward current IFRM 5.5 A tp ≤ 1 ms; δ ≤ 0.25 2
Non-repetitive peak forward current IFSM 9 A tp = 8 ms; square wave 2
Total power dissipation Ptot 360 mW Tamb ≤ 25 °C; FR4 PCB, standard footprint 2
Total power dissipation Ptot 830 mW Tamb ≤ 25 °C; FR4 PCB, cathode pad 1 cm2 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance junction to ambient Rth(j-a) 350 K/W in free air; FR4 PCB, standard footprint 2
Thermal resistance junction to ambient Rth(j-a) 150 K/W in free air; FR4 PCB, cathode pad 1 cm2 2
Thermal resistance junction to solder point Rth(j-sp) 55 K/W 2

CAD (KiCad official)

  • Symbol: PMEG2015EJ
  • Footprint: Diode_SMD:D_SOD-323F
  • 3D model: SOD-323F (KiCad packages3D, STEP)
  • 3D model files: pmeg2015ej-etched.step / pmeg2015ej-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmeg2015ej.step / pmeg2015ej.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 6c154452bf366c2c, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF