component

PMEG2005ET

Public Made by Adom

by adom

Nexperia Schottky Barrier Diodes (SBD), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PMEG2005ET

Nexperia · Schottky Barrier Diodes (SBD) · SOT-23

PMEG2005ET from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Anode of the Schottky barrier rectifier; forward current up to 0.5 A with VF of 355 mV typ at IF = 500 mA.
2 n.c. unconnected Not connected.
3 K passive Cathode of the Schottky barrier rectifier; reverse voltage up to 20 V.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse voltage VR 20 V 2
Forward current IF 0.5 A 2
Repetitive peak forward current IFRM 3.9 A tp ≤ 1 ms; δ ≤ 0.5 2
Non-repetitive peak forward current IFSM 10 A tp = 8 ms; square wave 2
Total power dissipation (standard footprint) Ptot 280 mW Tamb ≤ 25 °C; FR4 PCB, standard footprint 2
Total power dissipation (1 cm² cathode pad) Ptot 420 mW Tamb ≤ 25 °C; FR4 PCB, cathode pad 1 cm² 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance junction to ambient (standard footprint) Rth(j-a) 440 K/W in free air; FR4 PCB, standard footprint 2
Thermal resistance junction to ambient (1 cm² cathode pad) Rth(j-a) 300 K/W in free air; FR4 PCB, cathode pad 1 cm² 2
Forward voltage VF 90 130 mV IF = 0.1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
Forward voltage VF 150 190 mV IF = 1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
Forward voltage VF 210 240 mV IF = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
Forward voltage VF 280 330 mV IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
Forward voltage VF 355 390 mV IF = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
Reverse current IR 15 40 µA VR = 10 V; Tamb = 25 °C 3
Reverse current IR 40 200 µA VR = 20 V; Tamb = 25 °C 3
Diode capacitance Cd 66 80 pF VR = 1 V; f = 1 MHz; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: PMEG2005ET
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmeg2005et-etched.step / pmeg2005et-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmeg2005et.step / pmeg2005et.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 b271ca2582beb053, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF