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PMEG100V080ELPE-QZ

Public Made by Adom

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Nexperia Schottky Diodes, TO-277. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PMEG100V080ELPE-QZ

Nexperia · Schottky Diodes · TO-277

PMEG100V080ELPE-QZ from Nexperia, in a TO-277. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Anode; the datasheet lists pins 1 and 2 as anode terminals of the Schottky diode (100 V reverse voltage, 8 A average forward current).
2 A passive Anode; the datasheet lists pins 1 and 2 as anode terminals of the Schottky diode (100 V reverse voltage, 8 A average forward current).
3 K passive Cathode, the large tab on the package; the datasheet specifies the soldering point as the cathode tab with Rth(j-sp) of 3 K/W max.

Key specifications

Parameter Value
Manufacturer Nexperia
Package TO-277
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse voltage VR 100 V Tj = 25 °C 2
Forward current IF 11.2 A δ = 1; Tsp ≤ 170 °C 2
Average forward current IF(AV) 8 A δ = 0.5; f = 20 kHz; square wave; Tsp ≤ 171 °C 2
Non-repetitive peak forward current IFSM 180 A tp = 8.3 ms; half sine wave; Tj(init) = 25 °C 2
Total power dissipation Ptot 1.66 W Tamb ≤ 25 °C; FR4 PCB, standard footprint [1] 2
Total power dissipation Ptot 2.15 W FR4 PCB, mounting pad for cathode 1 cm2 [2] 2
Junction temperature Tj 175 °C 2
Ambient temperature Tamb -55 175 °C 2
Storage temperature Tstg -65 175 °C 2
Thermal resistance from junction to ambient Rth(j-a) 90 K/W in free air; FR4 PCB, standard footprint [2] 3
Thermal resistance from junction to ambient Rth(j-a) 70 K/W in free air; FR4 PCB, mounting pad for cathode 1 cm2 [3] 3
Thermal resistance from junction to solder point Rth(j-sp) 3 K/W Soldering point of cathode tab [4] 3
Reverse breakdown voltage V(BR)R 100 V IR = 1 mA; pulsed; Tj = 25 °C [1] 4
Forward voltage VF 790 mV IF = 4 A; pulsed; Tj = 25 °C [1] 4
Forward voltage VF 850 mV IF = 8 A; pulsed; Tj = 25 °C [1] 4
Forward voltage VF 970 mV IF = 8 A; pulsed; Tj = -40 °C [1] 4
Forward voltage VF 740 mV IF = 8 A; pulsed; Tj = 125 °C [1] 4
Reverse current IR 0.5 µA VR = 100 V; pulsed; Tj = 25 °C [1] 4
Reverse current IR 1.5 mA VR = 100 V; pulsed; Tj = 125 °C [1] 4
Reverse current IR 6 mA VR = 100 V; pulsed; Tj = 150 °C [1] 4

CAD (KiCad official)

  • Symbol: PMEG100V080ELPE-QZ
  • Footprint: Package_TO_SOT_SMD:TO-277A
  • 3D model: TO-277 (KiCad packages3D, STEP)
  • 3D model files: pmeg100v080elpe-qz-etched.step / pmeg100v080elpe-qz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmeg100v080elpe-qz.step / pmeg100v080elpe-qz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 ea57ba114b9c3b56, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF