component
PMEG100T30ELP-QX
Public Made by Adomby adom
Nexperia Schottky Barrier Diodes (SBD), SOD-128. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPMEG100T30ELP-QX
Nexperia · Schottky Barrier Diodes (SBD) · SOD-128
PMEG100T30ELP-QX from Nexperia, in a SOD-128. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the Schottky rectifier; the marking bar indicates the cathode, and the cathode tab is the soldering point for Rth(j-sp) of 12 K/W max. |
| 2 | A | passive | Anode of the Schottky rectifier; rated for 100 V reverse voltage and 3 A average forward current (IF(AV)) per the datasheet. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOD-128 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse voltage | VR | 100 | V | Tj = 25 °C | 2 | ||
| Forward current | IF | 4.2 | A | δ = 1; Tsp ≤ 156 °C | 2 | ||
| Average forward current | IF(AV) | 3 | A | δ = 0.5; f = 20 kHz; square wave; Tsp ≤ 160 °C | 2 | ||
| Non-repetitive peak forward current | IFSM | 90 | A | tp = 8.3 ms; half sine wave; Tj(init) = 25 °C | 2 | ||
| Total power dissipation (standard footprint) | Ptot | 0.75 | W | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint | 2 | ||
| Total power dissipation (1 cm2 cathode pad) | Ptot | 1.2 | W | Tamb ≤ 25 °C; FR4 PCB, mounting pad for cathode 1 cm2 | 2 | ||
| Junction temperature | Tj | 175 | °C | 2 | |||
| Ambient temperature | Tamb | -55 | 175 | °C | 2 | ||
| Storage temperature | Tstg | -65 | 175 | °C | 2 | ||
| Thermal resistance junction to ambient (standard footprint) | Rth(j-a) | 200 | K/W | in free air; FR4 PCB, standard footprint | 3 | ||
| Thermal resistance junction to ambient (1 cm2 cathode pad) | Rth(j-a) | 120 | K/W | in free air; FR4 PCB, mounting pad for cathode 1 cm2 | 3 | ||
| Thermal resistance junction to solder point | Rth(j-sp) | 12 | K/W | Soldering point of cathode tab | 3 | ||
| Reverse breakdown voltage | V(BR)R | 100 | V | IR = 1 mA; pulsed; Tj = 25 °C | 4 | ||
| Forward voltage | VF | 480 | 550 | mV | IF = 0.5 A; pulsed; Tj = 25 °C | 4 | |
| Forward voltage | VF | 540 | 610 | mV | IF = 1 A; pulsed; Tj = 25 °C | 4 | |
| Forward voltage | VF | 630 | 710 | mV | IF = 2 A; pulsed; Tj = 25 °C | 4 | |
| Forward voltage | VF | 705 | 800 | mV | IF = 3 A; pulsed; Tj = 25 °C | 4 | |
| Forward voltage | VF | 580 | 650 | mV | IF = 3 A; pulsed; Tj = 125 °C | 4 | |
| Forward voltage | VF | 545 | 620 | mV | IF = 3 A; pulsed; Tj = 150 °C | 4 | |
| Reverse current | IR | 0.1 | 0.8 | µA | VR = 60 V; pulsed; Tj = 25 °C | 4 | |
| Reverse current | IR | 0.25 | 1.75 | µA | VR = 100 V; pulsed; Tj = 25 °C | 4 | |
| Reverse current | IR | 0.42 | 2.2 | mA | VR = 100 V; pulsed; Tj = 125 °C | 4 | |
| Reverse current | IR | 1.65 | 8 | mA | VR = 100 V; pulsed; Tj = 150 °C | 4 | |
| Diode capacitance | Cd | 300 | pF | VR = 1 V; f = 1 MHz; Tj = 25 °C | 4 | ||
| Diode capacitance | Cd | 85 | pF | VR = 10 V; f = 1 MHz; Tj = 25 °C | 4 | ||
| Reverse recovery time, step recovery | trr | 9 | ns | IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; Tj = 25 °C | 4 | ||
| Reverse recovery time, ramp recovery | trr | 12.5 | ns | dIF/dt = 200 A/µs; IF = 6 A; VR = 26 V; Tj = 25 °C | 4 | ||
| Peak reverse recovery current | IRM | 1.3 | A | dIF/dt = 200 A/µs; IF = 6 A; VR = 26 V; Tj = 25 °C | 4 | ||
| Reverse recovery charge | Qrr | 10 | nC | dIF/dt = 200 A/s; IF = 6 A; VR = 26 V; Tj = 25 °C | 4 | ||
| Peak forward recovery voltage | VFRM | 480 | mV | IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C | 4 |
CAD (KiCad official)
- Symbol:
PMEG100T30ELP-QX - Footprint:
Diode_SMD:D_SOD-128 - 3D model: SOD-128 (KiCad packages3D, STEP)
- 3D model files:
pmeg100t30elp-qx-etched.step/pmeg100t30elp-qx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pmeg100t30elp-qx.step/pmeg100t30elp-qx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (14 pp, sha256
8d19eef144464004, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).