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PMEG10030ELP-QX

Nexperia · Schottky Diodes · SOD-128

PMEG10030ELP-QX from Nexperia, in a SOD-128. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the Schottky barrier rectifier; the marking bar on the package indicates the cathode.
2 A passive Anode of the Schottky barrier rectifier; the datasheet gives no additional pin-specific limits.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOD-128
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse voltage VR 100 V Tj = 25 °C 2
Forward current IF 4.2 A δ = 1; Tsp = 155 °C 2
Average forward current IF(AV) 3 A δ = 0.5; f = 20 kHz; square wave; Tamb ≤ 55 °C 2
Non-repetitive peak forward current IFSM 70 A tp = 8.3 ms; half-sine wave; Tj(init) = 25 °C 2
Total power dissipation Ptot 750 mW Tamb ≤ 25 °C; device mounted on FR4 PCB, single-sided copper, tin-plated, standard footprint [2] 2
Total power dissipation Ptot 1250 mW Tamb ≤ 25 °C; device mounted on FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2 [3] 2
Total power dissipation Ptot 2500 mW Tamb ≤ 25 °C; device mounted on ceramic PCB, Al2O3, standard footprint [1] 2
Junction temperature Tj 175 °C 2
Ambient temperature Tamb -55 175 °C 2
Storage temperature Tstg -65 175 °C 2
Thermal resistance from junction to ambient in free air Rth(j-a) 200 K/W FR4 PCB, single-sided copper, tin-plated, standard footprint [2] 3
Thermal resistance from junction to ambient in free air Rth(j-a) 120 K/W FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2 [3] 3
Thermal resistance from junction to ambient in free air Rth(j-a) 60 K/W Ceramic PCB, Al2O3, standard footprint [4] 3
Thermal resistance from junction to solder point Rth(j-sp) 12 K/W Soldering point of cathode tab [5] 3
Reverse breakdown voltage V(BR)R 100 V IR = 1 mA; tp = 300 µs; δ = 0.02; Tj = 25 °C 4
Forward voltage VF 455 510 mV IF = 0.1 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 4
Forward voltage VF 535 605 mV IF = 0.5 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 4
Forward voltage VF 565 640 mV IF = 0.7 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 4
Forward voltage VF 600 670 mV IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 4
Forward voltage VF 645 720 mV IF = 1.6 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 4
Forward voltage VF 670 740 mV IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 4
Forward voltage VF 710 770 mV IF = 3 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 4
Forward voltage VF 575 680 mV IF = 3 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 125 °C 4
Reverse current IR 110 450 nA VR = 100 V; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 4
Reverse current IR 220 1500 µA VR = 100 V; tp ≤ 300 µs; δ ≤ 0.02; Tj = 125 °C 4

CAD (KiCad official)

  • Symbol: PMEG10030ELP-QX
  • Footprint: Diode_SMD:D_SOD-128
  • 3D model: SOD-128 (KiCad packages3D, STEP)
  • 3D model files: pmeg10030elp-qx-etched.step / pmeg10030elp-qx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmeg10030elp-qx.step / pmeg10030elp-qx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 ae0482e542fdd5a1, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF