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PMEG045V100EPE-QZ

Public Made by Adom

by adom

Nexperia Schottky Diodes, TO-277. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PMEG045V100EPE-QZ

Nexperia · Schottky Diodes · TO-277

PMEG045V100EPE-QZ from Nexperia, in a TO-277. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Anode terminal of the Schottky barrier rectifier; Table 2 lists pins 1 and 2 both as anode.
2 A passive Anode terminal of the Schottky barrier rectifier; Table 2 lists pins 1 and 2 both as anode.
3 K passive Cathode terminal of the Schottky barrier rectifier; the cathode tab is the soldering point referenced for the junction-to-solder-point thermal resistance Rth(j-sp) of 3 K/W maximum.

Key specifications

Parameter Value
Manufacturer Nexperia
Package TO-277
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse voltage VR 45 V Tj = 25 °C 2
Forward current IF 14 A δ = 1; Tsp ≤ 173 °C 2
Average forward current IF(AV) 10 A δ = 0.5; f = 20 kHz; square wave; Tsp ≤ 174 °C 2
Non-repetitive peak forward current IFSM 300 A tp = 8.3 ms; half sine wave; Tj(init) = 25 °C 2
Total power dissipation Ptot 1.66 W Tamb ≤ 25 °C; FR4 PCB, single-sided copper, standard footprint [1] 2
Total power dissipation Ptot 2.15 W FR4 PCB, single-sided copper, mounting pad for cathode 1 cm2 [2] 2
Junction temperature Tj 175 °C 2
Ambient temperature Tamb -55 175 °C 2
Storage temperature Tstg -65 175 °C 2
Thermal resistance from junction to ambient in free air Rth(j-a) 90 K/W in free air; FR4 PCB, single-sided copper, standard footprint [1][2] 3
Thermal resistance from junction to ambient in free air Rth(j-a) 70 K/W in free air; FR4 PCB, mounting pad for cathode 1 cm2 [1][3] 3
Thermal resistance from junction to solder point Rth(j-sp) 3 K/W soldering point of cathode tab [4] 3
Reverse breakdown voltage V(BR)R 45 V IR = 5 mA; pulsed; Tj = 25 °C [1] 4
Forward voltage VF 320 360 mV IF = 1 A; pulsed; Tj = 25 °C [1] 4
Forward voltage VF 390 430 mV IF = 5 A; pulsed; Tj = 25 °C [1] 4
Forward voltage VF 450 490 mV IF = 10 A; pulsed; Tj = 25 °C [1] 4
Forward voltage VF 510 570 mV IF = 10 A; pulsed; Tj = -40 °C [1] 4
Forward voltage VF 390 460 mV IF = 10 A; pulsed; Tj = 125 °C [1] 4
Reverse current IR 150 600 µA VR = 45 V; pulsed; Tj = 25 °C [1] 4
Diode capacitance Cd 1140 pF VR = 1 V; f = 1 MHz; Tj = 25 °C 4
Diode capacitance Cd 375 pF VR = 10 V; f = 1 MHz; Tj = 25 °C 4
Reverse recovery time, step recovery trr 36 ns IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; Tj = 25 °C 4
Reverse recovery time, ramp recovery 19 ns dIF/dt = 100 A/µs; IF = 3 A; VR = 30 V; Tj = 25 °C 4
Peak forward recovery voltage VFRM 290 mV IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C 4

CAD (KiCad official)

  • Symbol: PMEG045V100EPE-QZ
  • Footprint: Package_TO_SOT_SMD:TO-277A
  • 3D model: TO-277 (KiCad packages3D, STEP)
  • 3D model files: pmeg045v100epe-qz-etched.step / pmeg045v100epe-qz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmeg045v100epe-qz.step / pmeg045v100epe-qz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (12 pp, sha256 0d1046e08957ddf2, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF