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PMBTA56

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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PMBTA56

Nexperia · Bipolar (BJT) · SOT-23

PMBTA56 from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base of the PNP transistor; the datasheet limits peak base current to -200 mA for single pulses with tp ≤ 1 ms.
2 E passive Emitter of the PNP transistor; the emitter-base voltage is limited to -5 V with the collector open (VEBO).
3 C passive Collector of the PNP transistor; limited to -80 V collector-emitter voltage with the base open (VCEO), -500 mA continuous collector current and -1 A peak collector current.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage temperature Tstg -65 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Junction temperature Tj 150 °C 2
Collector-base voltage VCBO -80 V open emitter 2
Collector-emitter voltage VCEO -80 V open base 2
Emitter-base voltage VEBO -5 V open collector 2
Collector current IC -500 mA 2
Peak collector current ICM -1 A 2
Peak base current IBM -200 mA single pulse; tp ≤ 1 ms 2
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C; device mounted on FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint [1] 2
Thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air; device mounted on FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint [1] 2
Collector-base breakdown voltage V(BR)CBO -80 V IC = -100 µA; IE = 0 A; Tamb = 25 °C 3
Collector-emitter breakdown voltage V(BR)CEO -80 V IC = -1 mA; IB = 0 A; Tamb = 25 °C 3
Emitter-base breakdown voltage V(BR)EBO -5 V IE = -100 µA; IC = 0 A; Tamb = 25 °C 3
Collector-base cut-off current ICBO -50 nA VCB = -80 V; IE = 0 A 3
Emitter-base cut-off current IEBO -50 nA VEB = -5 V; IC = 0 A 3
DC current gain hFE 100 VCE = -1 V; IC = -10 mA; Tamb = 25 °C 3
Collector-emitter saturation voltage VCEsat -0.25 V IC = -100 mA; IB = -10 mA 3
Base-emitter voltage VBE -1.2 V VCE = -1 V; IC = -100 mA 3
Transition frequency fT 50 MHz VCE = -1 V; IC = -100 mA; f = 100 MHz 3

CAD (KiCad official)

  • Symbol: PMBTA56
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmbta56-etched.step / pmbta56-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmbta56.step / pmbta56.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (9 pp, sha256 1ecf184aada05f75, retrieved 2026-10-19, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF