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PMBTA45

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PMBTA45

Nexperia · Bipolar (BJT) · SOT-23

PMBTA45 from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base of the NPN transistor; the datasheet limits peak base current IBM to 200 mA (single pulse, tp ≤ 1 ms) and emitter-base voltage VEBO to 6 V.
2 E passive Emitter of the NPN transistor; the datasheet gives VEBO = 6 V (open collector) as the emitter-base voltage limit.
3 C passive Collector of the NPN transistor; the datasheet limits collector-emitter voltage VCEO to 500 V (open base), collector current IC to 0.15 A and peak collector current ICM to 0.5 A.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base cut-off current ICBO 100 nA VCB = 360 V; IE = 0 A; Tamb = 25 °C 4
collector-base cut-off current ICBO 10 µA VCB = 360 V; IE = 0 A; Tj = 150 °C 4
emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A; Tamb = 25 °C 4
collector-emitter cut-off current ICES 100 nA VCE = 360 V; VBE = 0 V; Tamb = 25 °C 4
DC current gain hFE 50 100 - VCE = 10 V; IC = 30 mA; Tamb = 25 °C 4
collector-emitter saturation voltage VCEsat 60 75 mV IC = 20 mA; IB = 2 mA; Tamb = 25 °C 4
collector-emitter saturation voltage VCEsat 65 90 mV IC = 50 mA; IB = 6 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 4
base-emitter saturation voltage VBEsat 0.75 0.9 V IC = 50 mA; IB = 5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 4
collector-base voltage VCBO 500 V open emitter 2
collector-emitter voltage VCEO 500 V open base 2
collector-emitter peak voltage VCESM 500 V VBE = 0 V 2
emitter-base voltage VEBO 6 V open collector 2
collector current IC 0.15 A 2
peak collector current ICM 0.5 A 2
peak base current IBM 200 mA single pulse; tp ≤ 1 ms 2
total power dissipation Ptot 300 mW Tamb ≤ 25 °C 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -55 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to ambient Rth(j-a) 417 K/W in free air 3
thermal resistance from junction to solder point Rth(j-sp) 70 K/W 3

CAD (KiCad official)

  • Symbol: PMBTA45
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmbta45-etched.step / pmbta45-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmbta45.step / pmbta45.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 b4070ff3e0191b92, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF