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PMBTA13

Public Made by Adom

by adom

Nexperia Darlington Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PMBTA13

Nexperia · Darlington Transistors · SOT-23

PMBTA13 from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN Darlington transistor; VEBO max 10 V and base current max 200 (unit printed as 'A' in the datasheet).
2 E passive Emitter of the NPN Darlington transistor.
3 C passive Collector of the NPN Darlington transistor; VCEO max 30 V, IC max 500 mA, ICM max 800 mA.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 30 V open emitter 2
collector-emitter voltage VCEO 30 V open base 2
emitter-base voltage VEBO 10 V open collector 2
collector current IC 500 mA 2
peak collector current ICM 800 mA 2
base current IB 200 A 2
total power dissipation Ptot 250 mW Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint 2
collector-base cut-off current ICBO 100 nA VCB = 30 V; IE = 0 A; Tj = 25 °C 3
emitter-base cut-off current IEBO 100 nA VEB = 10 V; IC = 0 A; Tj = 25 °C 3
DC current gain hFE 5000 VCE = 5 V; IC = 10 mA; Tj = 25 °C 3
DC current gain hFE 10000 VCE = 5 V; IC = 100 mA; Tj = 25 °C 3
collector-emitter saturation voltage VCEsat 1.5 V IC = 100 mA; IB = 0.1 mA; Tj = 25 °C 3
base-emitter turn-on voltage VBEon 1.4 V VCE = 5 V; IC = 100 mA; Tj = 25 °C 3
transition frequency fT 125 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz; Tj = 25 °C 3

CAD (KiCad official)

  • Symbol: PMBTA13
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmbta13-etched.step / pmbta13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmbta13.step / pmbta13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 2c5c4fb7db4cd008, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF