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PMBT2222

Public Made by Adom

by adom

Nexperia Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PMBT2222

Nexperia · Bipolar Transistors - BJT · SOT-23

PMBT2222 from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the NPN transistor, used to control the collector-emitter current.
2 E passive Emitter terminal of the NPN transistor, the common reference for base and collector.
3 C passive Collector terminal of the NPN transistor, rated at max. 600 mA collector current and max. 30 V VCEO.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 60 V open emitter 2
collector-emitter voltage VCEO 30 V open base 2
emitter-base voltage VEBO 5 V open collector 2
collector current IC 600 mA 2
peak collector current ICM 800 mA 2
peak base current IBM 200 mA 2
total power dissipation Ptot 250 mW Tamb ≤ 25 °C [1] 2
junction temperature Tj 150 °C 2
ambient temperature Tamb -65 150 °C 2
storage temperature Tstg -65 150 °C 2
thermal resistance from junction to ambient Rth(j-a) 500 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint 3
collector-base cut-off current ICBO 10 nA VCB = 50 V; IE = 0 A; Tj = 25 °C 4
collector-base cut-off current ICBO 10 µA VCB = 50 V; IE = 0 A; Tj = 125 °C 4
emitter-base cut-off current IEBO 10 nA VEB = 5 V; IC = 0 A; Tj = 25 °C 4
DC current gain hFE 35 VCE = 10 V; IC = 0.1 mA; Tj = 25 °C 4
DC current gain hFE 50 VCE = 10 V; IC = 1 mA; Tj = 25 °C 4
DC current gain hFE 75 VCE = 10 V; IC = 10 mA; Tj = 25 °C 4
DC current gain hFE 100 300 VCE = 10 V; IC = 150 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 4
DC current gain hFE 30 VCE = 10 V; IC = 500 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 4
collector-emitter saturation voltage VCEsat 400 mV IC = 150 mA; IB = 15 mA; Tj = 25 °C 4
collector-emitter saturation voltage VCEsat 1.6 V IC = 500 mA; IB = 50 mA; Tj = 25 °C 4
base-emitter saturation voltage VBEsat 1.3 V IC = 150 mA; IB = 15 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 4
base-emitter saturation voltage VBEsat 2.6 V IC = 500 mA; IB = 50 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C 4
delay time td 15 ns 4
rise time tr 20 ns 4
turn-on time ton 35 ns 4
storage time ts 200 ns 4
fall time tf 60 ns 4
turn-off time toff 250 ns IC = 150 mA; IBon = 15 mA; IBoff = -15 mA; VCC = 10 V; Tj = 25 °C 4
collector capacitance Cc 8 pF VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tj = 25 °C 4
emitter capacitance Ce 30 pF VEB = 500 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tj = 25 °C 4
transition frequency fT 250 MHz VCE = 20 V; IC = 20 mA; f = 100 MHz; Tj = 25 °C 4
noise figure NF 4 dB VCE = 5 V; IC = 100 µA; RS = 1 kΩ; f = 1 kHz; Tj = 25 °C 4

CAD (KiCad official)

  • Symbol: PMBT2222
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmbt2222-etched.step / pmbt2222-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmbt2222.step / pmbt2222.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 32769f5e7359ede7, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF