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Ray Publish 0.1.0 16855c3 3h ago

PMBD7100

Nexperia · Switching Diodes · SOT-23

PMBD7100 from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 a1 passive Anode of the first high-speed switching diode; the device has a continuous reverse voltage of max. 100 V and a repetitive peak forward current of max. 450 mA.
2 a2 passive Anode of the second high-speed switching diode; the device has a continuous reverse voltage of max. 100 V and a repetitive peak forward current of max. 450 mA.
3 common connection passive Common connection of the two diodes, which the datasheet describes as common cathodes; the diodes switch at max. 4 ns.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 100 V 4
Continuous reverse voltage VR 100 V 4
Continuous forward current IF 215 mA single diode loaded; see Fig.2; note 1 4
Continuous forward current IF 125 mA double diode loaded; see Fig.2; note 1 4
Repetitive peak forward current IFRM 450 mA 4
Non-repetitive peak forward current IFSM 4 A square wave; Tj = 25 °C prior to surge; see Fig.4; tp = 1 µs 4
Non-repetitive peak forward current IFSM 1 A square wave; Tj = 25 °C prior to surge; see Fig.4; tp = 1 ms 4
Non-repetitive peak forward current IFSM 0.5 A square wave; Tj = 25 °C prior to surge; see Fig.4; tp = 1 s 4
Total power dissipation Ptot 250 mW Tamb = 25 °C; note 1 4
Storage temperature Tstg -65 150 °C 4
Junction temperature Tj 150 °C 4
Forward voltage VF 715 mV IF = 1 mA; see Fig.3 5
Forward voltage VF 855 mV IF = 10 mA; see Fig.3 5
Forward voltage VF 1 V IF = 50 mA; see Fig.3 5
Forward voltage VF 1.25 V IF = 150 mA; see Fig.3 5
Reverse current IR 30 nA VR = 25 V; see Fig.5 5
Reverse current IR 2.5 µA VR = 100 V; see Fig.5 5
Reverse current IR 60 µA VR = 25 V; Tj = 150 °C; see Fig.5 5
Reverse current IR 100 µA VR = 100 V; Tj = 150 °C; see Fig.5 5
Diode capacitance Cd 1.5 pF VR = 0 V; f = 1 MHz; see Fig.6 5
Reverse recovery time trr 4 ns when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 5
Forward recovery voltage Vfr 1.75 V when switched from IF = 10 mA to tr = 20 nA; see Fig.8 5
Thermal resistance from junction to tie-point Rth j-tp 360 K/W 5
Thermal resistance from junction to ambient Rth j-a 500 K/W note 1: device mounted on an FR4 printed-circuit board 5

CAD (KiCad official)

  • Symbol: PMBD7100
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmbd7100-etched.step / pmbd7100-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmbd7100.step / pmbd7100.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 4588137052dbe06b, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF