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Contents

README

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PL9405

POWLICON · DC-DC Converters · QFN-48(6x6)

PL9405 from POWLICON, in a QFN-48(6x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BST1 passive Bootstrap pin for the high-side MOSFET driver 1, referenced to SW1.
2 D1 bidirectional Power node of VBAT connected to the battery port; it is the power output of the converter in charging mode and the power input in discharging mode.
3 VBAT power_in Battery-side VBAT pin with a 3.6 V to 32 V input range; the pin-table text reads 'Connect to the VBUS rail', which conflicts with the pin name (see review_required).
4 CSP1 input Positive input of the input-side current sense, paired with CSN1 for average input current limiting against a 40 mV reference.
5 CSN1 input Negative input of the input-side current sense; shorting CSP1 to CSN1 disables the average current loop.
6 EN input Logic high above the 1.2 V operating threshold enables the converter; below the 1.1 V standby threshold only the LDO remains active, and the pin is pulled up to 4 V internally through 2 MΩ.
7 PGND power_in Power ground for the power stage, to be connected to AGND at the thermal pad.
8 CELLS input Resistor divider between VDD and GND programs the battery cell count from 1 to 6 cells.
9 OTG input Logic low selects battery charging mode and connection to LDO selects battery discharging mode; the OTG high threshold is 1.2 V with 200 mV hysteresis.
10 TS input Battery temperature sense input; a voltage divider sets the protection trip point in charging or discharging mode.
11 VDD power_out 5.4 V supply for the PL9405 control core.
12 VADJ input Accepts a 0-2 V analog voltage or PWM signal to program VREF; connecting it to VDD forces VREF to 2 V.
13 IADJ input Accepts a 0-2 V analog voltage or PWM signal to program IREF; connecting it to VDD forces IREF to 2 V.
14 VSET input Resistor to GND selects battery cell type (4.2 V, 4.35 V, 4.4 V or 4.5 V) in charging mode, and in discharging mode with OTG above 1.2 V its voltage follows the CSP2-CSN2 difference.
15 IREF power_out Reference voltage for the input and output current limiting loop.
16 VREF power_out Reference voltage for the voltage control loop, 2 V in discharging mode and 1.8 V in charging mode when VADJ is tied to VDD.
17 BRCOM output Battery internal-resistance compensation pin whose voltage is proportional to the CSP1-CSN1 difference, with a resistor to GND programming the compensation.
18 LDO power_out Low quiescent current 5 V / 55 mA LDO powered from VBAT that stays active to supply the system MCU when EN is low.
19 STAT output Charging status output in charging mode (OTG low) and power-good output in discharging mode (OTG high).
20 AGND power_in Analog ground, to be connected to PGND at the thermal pad under the IC.
21 FREQ input Connecting to GND sets 150 kHz and connecting to VDD sets 300 kHz; a divider between VDD and GND sets 600 kHz or 1200 kHz.
22 COMP passive Error amplifier output of the control loop.
23 VREG input Resistor divider programs the VBUS regulation voltage; when VBUS is pulled down to this setpoint in charging mode, the loop reduces charge current, and it is inactive in discharging mode.
24 FB2 input VBUS voltage feedback input regulated to 2 V in discharging mode through a resistor divider from VBUS to GND.
25 CSN2 input Negative input of the output-side current sense, paired with CSP2.
26 CSP2 input Positive input of the output-side current sense, paired with CSN2; shorting CSP2 to CSN2 disables the average current loop.
27 VBUS power_in Connect to the VBUS rail, with a 3.6 V to 32 V operating range.
28 HG2 output High-side MOSFET gate driver output 2, capable of 2 A source and 2 A sink peak current.
29 BST2 passive Bootstrap pin for the high-side driver 2, referenced to SW2.
30 PGND power_in Power ground for the power stage.
31 SW2 passive Switching node 2 of the power stage.
32 LG2 output Low-side MOSFET gate driver output 2, capable of 2 A source and 2 A sink peak current.
33 SW1 passive Switching node 1 of the power stage.
34 SW1 passive Switching node 1 of the power stage.
35 SW1 passive Switching node 1 of the power stage.
36 VCC power_out 6.6 V supply for the high-side and low-side gate drivers.
37 PGND power_in Power ground for the power stage.
38 PGND power_in Power ground for the power stage.
39 PGND power_in Power ground for the power stage.
40 PGND power_in Power ground for the power stage.
41 PGND power_in Power ground for the power stage.
42 SW1 passive Switching node 1 of the power stage.
43 D1 bidirectional Power node of VBAT connected to the battery port; it is the power output of the converter in charging mode and the power input in discharging mode.
44 D1 bidirectional Power node of VBAT connected to the battery port; it is the power output of the converter in charging mode and the power input in discharging mode.
45 D1 bidirectional Power node of VBAT connected to the battery port; it is the power output of the converter in charging mode and the power input in discharging mode.
46 D1 bidirectional Power node of VBAT connected to the battery port; it is the power output of the converter in charging mode and the power input in discharging mode.
47 D1 bidirectional Power node of VBAT connected to the battery port; it is the power output of the converter in charging mode and the power input in discharging mode.
48 D1 bidirectional Power node of VBAT connected to the battery port; it is the power output of the converter in charging mode and the power input in discharging mode.
49 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer POWLICON
Package QFN-48(6x6)
Category Power Supply Chip
Pins 49

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VBAT battery voltage 3.6 32 V 5
VBUS bus line voltage 3.6 32 V 5
Operation threshold (EN UVLO) VEN_UV 1.1 1.2 1.3 V 5
High side MOS on resistance RDSon_HS 9 10 mΩ VCC=6.6V 6
Low side MOS on resistance RDSon_LS 9 10 mΩ VCC=6.6V 6
Input voltages VBAT, VBUS 3.6 32 V 4
Operating junction temperature range TJ -40 125 °C 4
VBAT, VBUS, CSN1, CSN2, CSP1, CSP2, SW1, SW2, D1 to GND -0.3 40 V 4
BST1 to SW1 -0.3 7 V 4
HG2, BST2 to SW2 -0.3 7 V 4
LG2, VCC to GND -0.3 7 V 4
CSP1 to CSN1 -0.3 0.6 V 4
CSP2 to CSN2 -0.3 0.6 V 4
VBAT to CSP1, CSN1 -0.3 0.6 V 4
VBUS to CSP2, CSN2 -0.3 0.6 V 4
Other pins to GND -0.3 6 V 4
Storage temperature range TST -65 150 °C 4
Junction temperature TJ 150 °C 4
Lead temperature TL 260 °C 4
ESD HBM Human body model VESD 2 kV HBM, Human body model 4
Junction to ambient thermal resistance (QFN6X6-48) θJA 58 °C/W Measured on approximately 1 inch square of 1 oz copper 4
Junction to case thermal resistance (QFN6X6-48) θJC 5 °C/W 4

CAD (KiCad official)

  • Symbol: PL9405
  • Footprint: Package_DFN_QFN:QFN-48-1EP_6x6mm_P0.4mm_EP4.4x4.4mm
  • 3D model: QFN-48(6x6), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: pl9405-etched.step / pl9405-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pl9405.step / pl9405.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: POWLICON datasheet (17 pp, sha256 aed439ba506a8969, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF