component
PJMG10P60SQ
Public Made by Adomby adom
PJSEMI MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPJMG10P60SQ
PJSEMI · MOSFETs · SOT-89
PJMG10P60SQ from PJSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; gate-source voltage limit is ±20 V, with RDS(on) specified at VGS = -10 V and -4.5 V. |
| 2 | Drain | passive | Drain terminal; drain-source voltage rating is -60 V with continuous drain current of -10 A (pulsed -30 A). |
| 3 | Source | passive | Source terminal of the P-channel MOSFET; diode forward current of -10 A through the body diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | -V(BR)DSS | 60 | V | VGS=0V,ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | -IDSS | 1 | μA | VDS=-48V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | -VGS(th) | 1 | 1.8 | 2.5 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | 60 | 75 | mΩ | VGS=-10V,ID=-8A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 80 | 110 | mΩ | VGS=-4.5V,ID=-8A | 2 | |
| Diode Forward Voltage | -VSD | 1.4 | V | VGS=0V,IS=-10A | 2 | ||
| Diode Forward Current | -IS | 10 | A | 2 | |||
| Drain-Source Voltage | -VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | -ID | 10 | A | 1 | |||
| Drain Current-Pulsed | -IDM | 30 | A | Note1 | 1 | ||
| Maximum Power Dissipation | PD | 1.5 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 83 | °C/W | Note2 | 1 | ||
| Forward Transconductance | gFS | 4.5 | S | VDS=-5V,ID=-1A | 2 | ||
| Input Capacitance | Ciss | 515 | pF | VDS=-15V,VGS=0V,f=1MHz | 2 | ||
| Output Capacitance | Coss | 135 | pF | VDS=-15V,VGS=0V,f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 12 | pF | VDS=-15V,VGS=0V,f=1MHz | 2 | ||
| Gate Resistance | Rg | 3 | Ω | VDS=0V,VGS=0V,f=1MHz | 2 | ||
| Total Gate Charge | Qg | 9.86 | nC | VDS=-48V,ID=-10A,VGS=-4.5V | 2 | ||
| Gate-Source Charge | Qgs | 3.08 | nC | VDS=-48V,ID=-10A,VGS=-4.5V | 2 | ||
| Gate-Drain Charge | Qgd | 2.95 | nC | VDS=-48V,ID=-10A,VGS=-4.5V | 2 | ||
| Turn-on Delay Time | td(on) | 28.8 | nS | VDD=-15V,ID=-1A,VGS=-10V,RGEN=3.3Ω | 2 | ||
| Turn-on Rise Time | tr | 19.8 | nS | VDD=-15V,ID=-1A,VGS=-10V,RGEN=3.3Ω | 2 | ||
| Turn-off Delay Time | td(off) | 60.8 | nS | VDD=-15V,ID=-1A,VGS=-10V,RGEN=3.3Ω | 2 | ||
| Turn-off Fall Time | tf | 7.2 | nS | VDD=-15V,ID=-1A,VGS=-10V,RGEN=3.3Ω | 2 |
CAD (KiCad official)
- Symbol:
PJMG10P60SQ - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
pjmg10p60sq-etched.step/pjmg10p60sq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjmg10p60sq.step/pjmg10p60sq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (8 pp, sha256
9bfb7cc447ea9000, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).