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PJMG10H45NTE

Public Made by Adom

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PJSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PJMG10H45NTE

PJSEMI · MOSFETs · TO-252

PJMG10H45NTE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-source voltage limited to ±20 V, with VGS(th) of 1.0 V min to 2.5 V max at 250 μA.
2 Drain passive Drain terminal; drain-source voltage rated to 100 V with 45 A continuous and 180 A pulsed drain current.
3 Source passive Source terminal of the N-channel MOSFET; body diode forward current IS is 45 A max.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.8 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-Resistance RDS(on) 14 17 mΩ VGS=10V,ID=20A 2
Drain-Source On-Resistance RDS(on) 18 22 mΩ VGS=4.5V,ID=10A 2
Diode Forward Voltage VSD 1.3 V VGS=0V,IS=20A 2
Diode Forward Current IS 45 A 2
Drain-Source Voltage VDS 100 V 25℃ case temperature 1
Gate-Source Voltage VGS -20 20 V 25℃ case temperature 1
Drain Current-Continuous ID 45 A 25℃ case temperature 1
Drain Current-Pulsed IDM 180 A 25℃ case temperature 1
Maximum Power Dissipation PD 72 W 25℃ case temperature 1
Single Pulse Avalanche Energy EAS 76.5 mJ TJ=25℃,VDD=50V, VG=10V, RG=25Ω, L=0.5mH, IAS=17.5A 1
Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Case RθJC 1.74 °C/W 1
Forward Transconductance gFS 11 S VDS=5V,ID=3A 2
Input Capacitance Ciss 1187 pF VDS=30V,VGS=0V,f=1MHz 2
Output Capacitance Coss 579 pF VDS=30V,VGS=0V,f=1MHz 2
Reverse Transfer Capacitance Crss 13 pF VDS=30V,VGS=0V,f=1MHz 2
Gate Resistance RG 1.7 Ω VDS=0V,VGS=0V,f=1MHz 2
Total Gate Charge Qg 16 nC VDS=50V, ID=25A, VGS=10V 2
Gate-Source Charge Qgs 5.6 nC VDS=50V, ID=25A, VGS=10V 2
Gate-Drain Charge Qgd 2.4 nC VDS=50V, ID=25A, VGS=10V 2
Turn-on Delay Time td(on) 39.2 nS VDD=50V, ID=25A, VGS=10V, RGEN=2.2Ω 2
Turn-on Rise Time tr 11 nS VDD=50V, ID=25A, VGS=10V, RGEN=2.2Ω 2
Turn-off Delay Time td(off) 53.2 nS VDD=50V, ID=25A, VGS=10V, RGEN=2.2Ω 2
Turn-off Fall Time tf 15.8 nS VDD=50V, ID=25A, VGS=10V, RGEN=2.2Ω 2

CAD (KiCad official)

  • Symbol: PJMG10H45NTE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: pjmg10h45nte-etched.step / pjmg10h45nte-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjmg10h45nte.step / pjmg10h45nte.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (8 pp, sha256 43773e4f92e62c12, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF