component

PJMG10H08NTE

Public Made by Adom

by adom

PJSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorspjmg10h08ntefactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 14d ago
viewers pjmg10h08nte: viewers · Ray 14d ago
package.json Publish 0.1.0 · Ray 14d ago
page.json Set visibility: public · Ray 14d ago
pjmg10h08nte-etched.glb Publish 0.1.0 · Ray 14d ago
pjmg10h08nte-etched.step pjmg10h08nte: factory component page (tier=lcsc) · Ray 14d ago
pjmg10h08nte-hero.glb pjmg10h08nte: hero GLB from the etched model (keeps the MPN mark) · Ray 14d ago
pjmg10h08nte-hero.overlay.json Publish 0.1.0 · Ray 14d ago
pjmg10h08nte.glb Publish 0.1.0 · Ray 14d ago
pjmg10h08nte.kicad_mod Publish 0.1.0 · Ray 14d ago
pjmg10h08nte.kicad_sym Publish 0.1.0 · Ray 14d ago
pjmg10h08nte.lbr Publish 0.1.0 · Ray 14d ago
pjmg10h08nte.step Publish 0.1.0 · Ray 14d ago
README.md Publish 0.1.0 · Ray 14d ago

PJMG10H08NTE

PJSEMI · MOSFETs · TO-252

PJMG10H08NTE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with maximum gate-source voltage of ±20 V.
2 Drain passive Drain terminal, rated for 100 V drain-source voltage and 8 A continuous drain current.
3 Source passive Source terminal of the N-channel MOSFET, with body diode forward current up to 8 A.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-Resistance RDS(on) 86 100 mΩ VGS=10V,ID=3A 2
Drain-Source On-Resistance RDS(on) 112 150 mΩ VGS=4.5V,ID=1A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=5A 2
Diode Forward Current IS 8 A 2
Drain-Source Voltage VDS 100 V 25℃ case temperature 1
Gate-Source Voltage VGS -20 20 V 25℃ case temperature 1
Drain Current-Continuous ID 8 A 25℃ case temperature 1
Drain Current-Pulsed IDM 32 A 25℃ case temperature 1
Maximum Power Dissipation PD 32 W 25℃ case temperature 1
Single pulse avalanche energy EAS 6.25 mJ TJ=25℃,VDD=50V, VG=10V, RG=25Ω, L=0.5mH, IAS=5A 1
Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Case RθJC 3.9 °C/W 1
Forward Transconductance gFS 3.7 S VDS=5V,ID=2A 2
Input Capacitance Ciss 201 pF VDS=25V,VGS=0V,f=1MHz 2
Output Capacitance Coss 76.5 pF VDS=25V,VGS=0V,f=1MHz 2
Reverse Transfer Capacitance Crss 14 pF VDS=25V,VGS=0V,f=1MHz 2
Gate Resistance Rg 9 Ω VDS=0V,VGS=0V,f=1MHz 2
Total Gate Charge Qg 4 nC VDS=50V,ID=3A,VGS=10V 2
Gate-Source Charge Qgs 0.9 nC VDS=50V,ID=3A,VGS=10V 2
Gate-Drain Charge Qgd 1.1 nC VDS=50V,ID=3A,VGS=10V 2
Turn-on Delay Time td(on) 12.6 nS VDD=50V,ID=3A,VGS=10V,RGEN=3Ω 2
Turn-on Rise Time tr 19 nS VDD=50V,ID=3A,VGS=10V,RGEN=3Ω 2
Turn-off Delay Time td(off) 20 nS VDD=50V,ID=3A,VGS=10V,RGEN=3Ω 2
Turn-off Fall Time tf 27.8 nS VDD=50V,ID=3A,VGS=10V,RGEN=3Ω 2

CAD (KiCad official)

  • Symbol: PJMG10H08NTE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: pjmg10h08nte-etched.step / pjmg10h08nte-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjmg10h08nte.step / pjmg10h08nte.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (8 pp, sha256 d33c7fa9130cd68f, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF