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Contents

README

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PJM8205DNSG SOT-23-6

PJSEMI · MOSFETs · SOT-23-6

PJM8205DNSG SOT-23-6 from PJSEMI, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1 in this dual-MOSFET package; the device rating is VDS 20 V with 5 A continuous drain current.
2 D1 passive Drain of N-channel MOSFET 1 (listed as Drain1/Drain2 in the schematic note); the device rating is VDS 20 V with 5 A continuous drain current.
3 S2 passive Source of N-channel MOSFET 2 in this dual-MOSFET package; the device rating is VDS 20 V with 5 A continuous drain current.
4 G2 input Gate of N-channel MOSFET 2; the device gate-source voltage limit is VGS ±12 V.
5 D2 passive Drain of N-channel MOSFET 2 (listed as Drain1/Drain2 in the schematic note); the device rating is VDS 20 V with 5 A continuous drain current.
6 G1 input Gate of N-channel MOSFET 1; the device gate-source voltage limit is VGS ±12 V.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V Ratings at 25℃ ambient temperature 1
Gate-Source Voltage VGS -12 12 V Ratings at 25℃ ambient temperature 1
Drain Current-Continuous ID 5 A Ratings at 25℃ ambient temperature 1
Drain Current-Pulsed IDM 25 A Note1: Repetitive Rating, pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 1.25 W Ratings at 25℃ ambient temperature 1
Junction Temperature TJ 150 °C Ratings at 25℃ ambient temperature 1
Storage Temperature Range TSTG -55 150 °C Ratings at 25℃ ambient temperature 1
Thermal Resistance, Junction-to-Ambient RθJA 100 °C/W Note2: Surface Mounted on FR4 Board, t ≤ 10 sec. 1
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.7 1.2 V VDS=VGS,ID=250μA 2
Drain-Source On-Resistance RDS(on) 20 25 mΩ VGS=4.5V,ID=5A 2
Drain-Source On-Resistance RDS(on) 25 32 mΩ VGS=2.5V,ID=4A 2
Diode Forward Voltage VSD 0.8 1.2 V VGS=0V,IS=5A 2
Diode Forward Current IS 5 A 2

CAD (KiCad official)

  • Symbol: PJM8205DNSG SOT-23-6
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: pjm8205dnsg-sot-23-6-etched.step / pjm8205dnsg-sot-23-6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm8205dnsg-sot-23-6.step / pjm8205dnsg-sot-23-6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (7 pp, sha256 76b68313e8ad8a93, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF