PJM60N20TE

{
  "schema_version": 1,
  "type": "component",
  "slug": "pjm60n20te",
  "title": "PJM60N20TE",
  "brief": "PJSEMI MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "pjm60n20te"
  ],
  "component": {
    "mpn": "PJM60N20TE",
    "manufacturer": "PJSEMI",
    "package": "TO-252",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604430051781713920",
    "parts": {
      "symbol": "pjm60n20te.kicad_sym",
      "footprint": "pjm60n20te.kicad_mod",
      "model_3d": "pjm60n20te-etched.glb",
      "model_3d_plain": "pjm60n20te.glb",
      "model_3d_step": "pjm60n20te-etched.step",
      "model_3d_step_plain": "pjm60n20te.step",
      "lbr": "pjm60n20te.lbr"
    },
    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Insulated MOSFET gate; VGS(th) = 0.4-1 V (typ 0.65 V). Absolute maximum VGS = ±12 V. Drive at VGS = 4.5 V or higher for full enhancement (RDS(on) ~ 4.9 mΩ @ 25 A)."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain. Connected to the tab of the TO-252 package. V(BR)DSS = 20 V min, ID = 60 A continuous (IDM = 240 A pulsed). Primary heat-conduction path via the tab."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source. MOSFET source terminal; also anode of the intrinsic body diode (VSD ≤ 1.2 V @ IS = 30 A, IS max = 60 A). Reference for VGS and VDS."
      }
    ],
    "provenance": {
      "extractor": "ds2sf",
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604430051781713920",
        "pages": null,
        "sha256": "66b3d1c84e848f6f",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "pjm60n20te-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          9.9,
          6.5,
          2.32
        ],
        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "b543688f725405b2038425bbb66af2dd477d1e0505cb41455ae20c899d97ef20",
        "checked": "2026-10-16",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "PJSEMI",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    }
  },
  "variants": [
    {
      "mpn": "PJM60N20TE",
      "kind": "packaging"
    }
  ],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "pjm60n20te"
  ],
  "discovery_pitch": "PJM60N20TE (PJSEMI) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "pjm60n20te.kicad_sym",
    "pjm60n20te.kicad_mod",
    "pjm60n20te.glb",
    "pjm60n20te.step",
    "pjm60n20te.lbr",
    "docs/hero.png",
    "docs/pjm60n20te-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html"
  ],
  "visibility": {
    "public": true
  },
  "updated_at": "2026-09-25T04:26:20.833Z"
}