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Contents

README

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PJM60H02NTE

PJSEMI · MOSFETs · TO-252

PJM60H02NTE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with maximum gate-source voltage of ±30 V and threshold voltage of 2 to 4 V.
2 Drain passive Drain terminal, rated for VDS of 600 V and continuous drain current of 2 A (8 A pulsed).
3 Source passive Source terminal of the MOSFET, with body-diode continuous forward current of 2 A.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 600 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=600V,VGS=0V 2
Gate-Body Leakage Current IGSS -10 10 μA VGS=±30V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS,ID=250μA 2
Drain-Source On-Resistance RDS(on) 3.6 4.3 Ω VGS=10V,ID=1A 2
Diode Forward Voltage VSD 1.5 V VGS=0V,IS=2A 2
Diode Forward Current IS 2 A 2
Forward Transconductance gFS 1.8 S VDS=15V,ID=1A 2
Input Capacitance Ciss 280 pF VDS=25V,VGS=0V,f=1MHz 2
Output Capacitance Coss 31 pF VDS=25V,VGS=0V,f=1MHz 2
Reverse Transfer Capacitance Crss 5.4 pF VDS=25V,VGS=0V,f=1MHz 2
Turn-on Delay Time td(on) 7 nS VDD=300V, ID=2A, VGS=10V, RG=9.1Ω 2
Turn-on Rise Time tr 5 nS VDD=300V, ID=2A, VGS=10V, RG=9.1Ω 2
Turn-off Delay Time td(off) 26 nS VDD=300V, ID=2A, VGS=10V, RG=9.1Ω 2
Turn-off Fall Time tf 10.5 nS VDD=300V, ID=2A, VGS=10V, RG=9.1Ω 2
Total Gate Charge Qg 8.5 nC VDD=300V,ID=2A, VGS=10V 2
Gate-Source Charge Qgs 1.5 nC VDD=300V,ID=2A, VGS=10V 2
Gate-Drain Charge Qgd 4 nC VDD=300V,ID=2A, VGS=10V 2
Drain-Source Voltage VDS 600 V Ta=25℃ 1
Gate-Source Voltage VGS -30 30 V Ta=25℃ 1
Drain Current-Continuous ID 2 A Ta=25℃ 1
Drain Current-Pulsed IDM 8 A Note1 1
Single pulse avalanche energy EAS 80 mJ L=10mH, ID=3.7A, start TJ=25°C 1
Avalanche energy, Repetitive EAR 6.4 mJ Note1 1
Avalanche Current IAR 1.1 A Note1 1
Maximum Power Dissipation PD 35 W Ta=25℃ 1
Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W Note2 1
Maximum Junction-to-Case RθJC 3.57 °C/W Note2 1

CAD (KiCad official)

  • Symbol: PJM60H02NTE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: pjm60h02nte-etched.step / pjm60h02nte-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm60h02nte.step / pjm60h02nte.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (7 pp, sha256 bf855c02118e69cc, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF