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PJM40P40TE

Public Made by Adom

by adom

PJSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PJM40P40TE

PJSEMI · MOSFETs · TO-252

PJM40P40TE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel MOSFET; the datasheet gives a gate-source voltage rating of ±20 V.
2 Drain passive Drain terminal (tab) of the MOSFET; the datasheet rates the drain-source voltage at -40 V and continuous drain current at -40 A at 25℃ case temperature.
3 Source passive Source terminal of the MOSFET; the diode forward current is rated at -40 A and the drain-source on-resistance is specified at VGS = -10 V and -4.5 V.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Zero Gate Voltage Drain Current -IDSS 1 μA VDS=-40V,VGS=0V 2
Drain-Source Breakdown Voltage -V(BR)DSS 40 V VGS=0V,ID=-250μA 2
Gate Threshold Voltage -VGS(th) 1 1.5 2.5 V VDS=VGS,ID=-250μA 2
Drain-Source On-Resistance RDS(on) 9 12 mΩ VGS=-10V,ID=-15A 2
Drain-Source On-Resistance RDS(on) 13 17 mΩ VGS=-4.5V,ID=-10A 2
Diode Forward Voltage -VSD 1.2 V VGS=0V,IS=-30A 2
Diode Forward Current -IS 40 A 2
Drain-Source Voltage -VDS 40 V 1
Gate-Source Voltage -VGS -20 20 V 1
Drain Current-Continuous -ID 40 A 1
Drain Current-Pulsed -IDM 160 A 1
Maximum Power Dissipation PD 40 W 1
Single Pulse Avalanche Energy EAS 95 mJ Note2: TJ=25℃,VDD=-20V, VG=-10V, RG=25Ω, L=0.5mH, IAS=-19.5A 1
Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Case RθJC 3.1 °C/W 1
Forward Transconductance gFS 9 S VDS=-5V,ID=-2A 2
Input Capacitance Ciss 2053 pF VDS=-20V,VGS=0V,f=1MHz 2
Output Capacitance Coss 258 pF VDS=-20V,VGS=0V,f=1MHz 2
Reverse Transfer Capacitance Crss 212 pF VDS=-20V,VGS=0V,f=1MHz 2
Gate Resistance Rg 17 Ω VDS=0V,VGS=0V,f=1MHz 2
Total Gate Charge Qg 35 nC VDS=-20V,ID=-11A,VGS=-10V 2
Gate-Source Charge Qgs 6.2 nC VDS=-20V,ID=-11A,VGS=-10V 2
Gate-Drain Charge Qgd 7.3 nC VDS=-20V,ID=-11A,VGS=-10V 2
Turn-on Delay Time td(on) 10 nS VDD=-20V, ID=-11A, VGS=-10V, RGEN=2.5Ω 2
Turn-on Rise Time tr 20 nS VDD=-20V, ID=-11A, VGS=-10V, RGEN=2.5Ω 2
Turn-off Delay Time td(off) 51 nS VDD=-20V, ID=-11A, VGS=-10V, RGEN=2.5Ω 2
Turn-off Fall Time tf 28 nS VDD=-20V, ID=-11A, VGS=-10V, RGEN=2.5Ω 2

CAD (KiCad official)

  • Symbol: PJM40P40TE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: pjm40p40te-etched.step / pjm40p40te-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm40p40te.step / pjm40p40te.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (8 pp, sha256 3643121c792efe38, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF