component
PJM40N40TE
Public Made by Adomby adom
PJSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPJM40N40TE
PJSEMI · MOSFETs · TO-252
PJM40N40TE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate is the MOSFET control terminal, rated for a gate-source voltage VGS of ±20 V (absolute maximum). |
| 2 | Drain | passive | Drain is the power terminal, rated for a drain-source voltage VDS of 40 V and a continuous drain current ID of 40 A. |
| 3 | Source | passive | Source is the power return terminal, with a diode forward current IS of 40 A and a diode forward voltage VSD of 1.2 V maximum at IS = 20 A and VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | Ratings at 25℃ case temperature | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Ratings at 25℃ case temperature | 1 | |
| Drain Current-Continuous | ID | 40 | A | Ratings at 25℃ case temperature | 1 | ||
| Drain Current-Pulsed | IDM | 140 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 28 | W | Ratings at 25℃ case temperature | 1 | ||
| Single Pulse Avalanche Energy | EAS | 39 | mJ | Note 2: TJ=25℃, VDD=20V, VG=10V, RG=25Ω, L=0.5mH, IAS=12.5A | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 4.5 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 40 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.3 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | 9.5 | 13 | mΩ | VGS=10V,ID=20A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 12.5 | 23 | mΩ | VGS=4.5V,ID=10A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=20A | 2 | ||
| Diode Forward Current | IS | 40 | A | 2 |
CAD (KiCad official)
- Symbol:
PJM40N40TE - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
pjm40n40te-etched.step/pjm40n40te-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm40n40te.step/pjm40n40te.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (8 pp, sha256
7440462427648716, retrieved 2026-10-25, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).