component
PJM3401PSA
Public Made by Adomby adom
PJSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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pjm3401psa: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
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PJM3401PSA
PJSEMI · MOSFETs · SOT-23
PJM3401PSA from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel enhancement MOSFET, rated for a gate-source voltage of ±12 V (VGS). |
| 2 | Source | passive | Source terminal of the P-channel enhancement MOSFET, rated for a drain-source voltage of -30 V (VDS) and continuous drain current of -4.1 A. |
| 3 | Drain | passive | Drain terminal of the P-channel enhancement MOSFET, rated for a drain-source voltage of -30 V (VDS) and continuous drain current of -4.1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | -VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | -ID | 4.1 | A | 1 | |||
| Power Dissipation | PD | 1.2 | W | 1 | |||
| Junction Temperature Range | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Drain-source breakdown voltage | -V(BR)DSS | 30 | V | VGS = 0V, ID=-250µA | 2 | ||
| Drain to Source Leakage Current | -IDSS | 1 | µA | VDS =-24V, VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS =±12V, VDS = 0V | 2 | |
| Gate threshold voltage | -VGS(th) | 0.7 | 1.3 | V | VDS =VGS, ID =-250µA | 2 | |
| Drain-source on-resistance (VGS=-10V) | RDS(on) | 65 | mΩ | VGS =-10V, ID =-4.1A | 2 | ||
| Drain-source on-resistance (VGS=-4.5V) | RDS(on) | 85 | mΩ | VGS =-4.5V, ID =-2A | 2 | ||
| Diode Forward voltage | -VDS | 1 | V | VGS =0V, IS=-1A | 2 | ||
| Input Capacitance | Ciss | 954 | pF | VDS = -15V, VGS = 0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 115 | pF | VDS = -15V, VGS = 0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 77 | pF | VDS = -15V, VGS = 0V, f=1MHz | 2 | ||
| Turn-on delay time | td(on) | 6.3 | ns | VDD=-15V, VGS=-10V, RGEN =6Ω, RL =3.6Ω | 2 | ||
| Turn-on rise time | tr | 3.2 | ns | VDD=-15V, VGS=-10V, RGEN =6Ω, RL =3.6Ω | 2 | ||
| Turn-off delay time | td(off) | 38.2 | ns | VDD=-15V, VGS=-10V, RGEN =6Ω, RL =3.6Ω | 2 | ||
| Turn-off fall time | tf | 12 | ns | VDD=-15V, VGS=-10V, RGEN =6Ω, RL =3.6Ω | 2 | ||
| Maximum Junction-to-Ambient thermal resistance | RθJA | 104 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
PJM3401PSA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pjm3401psa-etched.step/pjm3401psa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm3401psa.step/pjm3401psa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (6 pp, sha256
c0def5862b8598fc, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PJM3401PSA
**PJSEMI** · MOSFETs · SOT-23
PJM3401PSA from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel enhancement MOSFET, rated for a gate-source voltage of ±12 V (VGS). |
| 2 | Source | passive | Source terminal of the P-channel enhancement MOSFET, rated for a drain-source voltage of -30 V (VDS) and continuous drain current of -4.1 A. |
| 3 | Drain | passive | Drain terminal of the P-channel enhancement MOSFET, rated for a drain-source voltage of -30 V (VDS) and continuous drain current of -4.1 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | -VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | -ID | | | 4.1 | A | | 1 |
| Power Dissipation | PD | | | 1.2 | W | | 1 |
| Junction Temperature Range | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Drain-source breakdown voltage | -V(BR)DSS | 30 | | | V | VGS = 0V, ID=-250µA | 2 |
| Drain to Source Leakage Current | -IDSS | | | 1 | µA | VDS =-24V, VGS = 0V | 2 |
| Gate-body leakage current | IGSS | -100 | | 100 | nA | VGS =±12V, VDS = 0V | 2 |
| Gate threshold voltage | -VGS(th) | 0.7 | | 1.3 | V | VDS =VGS, ID =-250µA | 2 |
| Drain-source on-resistance (VGS=-10V) | RDS(on) | | | 65 | mΩ | VGS =-10V, ID =-4.1A | 2 |
| Drain-source on-resistance (VGS=-4.5V) | RDS(on) | | | 85 | mΩ | VGS =-4.5V, ID =-2A | 2 |
| Diode Forward voltage | -VDS | | | 1 | V | VGS =0V, IS=-1A | 2 |
| Input Capacitance | Ciss | | 954 | | pF | VDS = -15V, VGS = 0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 115 | | pF | VDS = -15V, VGS = 0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 77 | | pF | VDS = -15V, VGS = 0V, f=1MHz | 2 |
| Turn-on delay time | td(on) | | 6.3 | | ns | VDD=-15V, VGS=-10V, RGEN =6Ω, RL =3.6Ω | 2 |
| Turn-on rise time | tr | | 3.2 | | ns | VDD=-15V, VGS=-10V, RGEN =6Ω, RL =3.6Ω | 2 |
| Turn-off delay time | td(off) | | 38.2 | | ns | VDD=-15V, VGS=-10V, RGEN =6Ω, RL =3.6Ω | 2 |
| Turn-off fall time | tf | | 12 | | ns | VDD=-15V, VGS=-10V, RGEN =6Ω, RL =3.6Ω | 2 |
| Maximum Junction-to-Ambient thermal resistance | RθJA | | 104 | | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `PJM3401PSA`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pjm3401psa-etched.step` / `pjm3401psa-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pjm3401psa.step` / `pjm3401psa.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [PJSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884475883499520) (6 pp, sha256 `c0def5862b8598fc`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pjm3401psa-datasheet.pdf)