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Contents

README

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PJM3400NSC

PJSEMI · MOSFETs · SOT-23

PJM3400NSC from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel enhancement-mode MOSFET; the datasheet limits gate-source voltage VGS to ±12 V.
2 Source passive Source of the N-channel MOSFET, the reference terminal for VGS; the diode forward current IS is rated at 5.8 A maximum.
3 Drain passive Drain of the N-channel MOSFET; rated for VDS of 30 V, continuous drain current ID of 5.8 A, and pulsed drain current IDM of 30 A.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V Ratings at 25℃ ambient unless otherwise specified 1
Gate-Source Voltage VGS -12 12 V Ratings at 25℃ ambient unless otherwise specified 1
Drain Current-Continuous ID 5.8 A Ratings at 25℃ ambient unless otherwise specified 1
Drain Current-Pulsed IDM 30 A Note1: repetitive rating, pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 1.4 W Ratings at 25℃ ambient unless otherwise specified 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ Ratings at 25℃ ambient unless otherwise specified 1
Thermal Resistance, Junction-to-Ambient RθJA 89 ℃/W Note2: surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Gate Threshold Voltage VGS(th) 0.7 0.9 1.4 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance (VGS=2.5V) RDS(ON) 45 mΩ VGS=2.5V, ID=4A 2
Drain-Source On-State Resistance (VGS=4.5V) RDS(ON) 31 mΩ VGS=4.5V, ID=5A 2
Drain-Source On-State Resistance (VGS=10V) RDS(ON) 27 mΩ VGS=10V, ID=5.8A 2
Forward Transconductance gFS 10 S VDS=5V, ID=5A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=5.8A 2
Diode Forward Current IS 5.8 A Note2: surface mounted on FR4 board, t ≤ 10 sec 2
Input Capacitance Ciss 825 pF VDS=15V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 100 pF 2
Reverse Transfer Capacitance Crss 78 pF 2
Turn-on Delay Time td(on) 3.3 nS VDD=15V, RL=2.7Ω, VGS=10V, RGEN=3Ω 2
Turn-on Rise Time tr 4.8 nS 2
Turn-Off Delay Time td(off) 26 nS 2
Turn-Off Fall Time tf 4 nS 2
Total Gate Charge Qg 10 nC VDS=15V, ID=5.8A, VGS=4.5V 2
Gate-Source Charge Qgs 1.6 nC 2
Gate-Drain Charge Qgd 3.1 nC 2

CAD (KiCad official)

  • Symbol: PJM3400NSC
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pjm3400nsc-etched.step / pjm3400nsc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm3400nsc.step / pjm3400nsc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (7 pp, sha256 3ce25b6e0d981f4b, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF