# PJM3018NSA

**PJSEMI** · MOSFETs · SOT-23

PJM3018NSA from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS, absolute maximum), and gate threshold VGS(th) is 0.8 V min to 2.5 V max at VDS=VGS, ID=250μA. |
| 2 | Source | passive | Source of the N-channel MOSFET, the reference terminal for VGS; the source-drain diode has a forward current rating of 0.5 A and forward voltage of 1.2 V max at VGS=0V, IS=0.5A. |
| 3 | Drain | passive | Drain of the N-channel MOSFET; drain-source voltage is rated at 30 V and continuous drain current at 0.5 A, with maximum power dissipation of 0.35 W for the device. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | 0.5 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 0.35 | W |  | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 357 | °C/W | Surface mounted on FR4 board, t ≤ 10 sec (Note 1) | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 |  |  | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -10 |  | 10 | μA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.8 |  | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 2 | 3 | Ω | VGS=10V,ID=0.3A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 2.5 | 4 | Ω | VGS=4.5V,ID=0.2A | 2 |
| Forward Transconductance | gFS | 20 |  |  | mS | VDS=3V,ID=10mA | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=0.5A | 2 |
| Diode Forward Current | IS |  |  | 0.5 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `PJM3018NSA`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `pjm3018nsa-etched.step` / `pjm3018nsa-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pjm3018nsa.step` / `pjm3018nsa.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [PJSEMI datasheet](docs/pjm3018nsa-datasheet.pdf) (6 pp, sha256 `e57134e69a614a50`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pjm3018nsa-datasheet.pdf)