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PJM2309PSC

Public Made by Adom

by adom

PJSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PJM2309PSC

PJSEMI · MOSFETs · SOT-23

PJM2309PSC from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the P-channel MOSFET; gate-source voltage is rated ±20 V (VGS) per the absolute maximum ratings.
2 Source passive Source of the P-channel MOSFET; the datasheet references VGS and the source-drain diode forward voltage (1.2 V max at -4 A, VGS = 0 V) to this terminal.
3 Drain passive Drain of the P-channel MOSFET; rated for -60 V drain-source voltage, -4 A continuous drain current and -20 A pulsed drain current at TA = 25 °C.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-body leakage current IGSS -100 100 nA VGS =±20V, VDS = 0V 2
Drain-source breakdown voltage -V(BR)DSS 60 V VGS = 0V, ID=-250µA 2
Drain to Source Leakage Current -IDSS 1 µA VDS =-60V,VGS = 0V 2
Gate threshold voltage -VGS(th) 1.5 3 V VDS =VGS, ID =-250µA 2
Drain-source on-resistance RDS(on) 180 mΩ VGS =-10V, ID =-2A 2
Drain-source on-resistance RDS(on) 280 mΩ VGS =-4.5V, ID =-1A 2
Diode Forward voltage -VDS 1.2 V VGS =0V, IS=-4A 2
Drain-Source Voltage -VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current -ID 4 A 1
Pulsed Drain Current -IDM 20 A Note 1 (repetitive rating, pulse width limited by max junction temperature) 1
Power Dissipation PD 1.4 W TA=25℃ 1
Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 89 °C/W Surface mounted on FR4 board, t ≤ 10 sec (Note 2) 1
Junction-to-Ambient thermal resistance (per unit base, Note 2) RthJA 166 °C/W Per Unit Base, surface mounted (Note 2 in transient impedance notes) 4
Forward transconductance gFS 6 S VDS =-5V, ID =-2A 2
Input Capacitance Ciss 850 pF VDS = -30V, VGS = 0V, f=1MHz 2
Output Capacitance Coss 65 pF VDS = -30V, VGS = 0V, f=1MHz 2
Reverse Transfer Capacitance Crss 28 pF VDS = -30V, VGS = 0V, f=1MHz 2
Turn-on delay time td(on) 7 ns ID=-1A, VDD=-30V, VGS=-10V, RGEN=3Ω, RL=7.5Ω 2
Turn-on rise time tr 3 ns ID=-1A, VDD=-30V, VGS=-10V, RGEN=3Ω, RL=7.5Ω 2
Turn-off delay time td(off) 28 ns ID=-1A, VDD=-30V, VGS=-10V, RGEN=3Ω, RL=7.5Ω 2
Turn-off fall time tf 22 ns ID=-1A, VDD=-30V, VGS=-10V, RGEN=3Ω, RL=7.5Ω 2
Total gate charge Qg 5.5 nC VDD =-30V, VGS =-10V, ID =-2A 2
Gate-source charge Qgs 2.5 nC VDD =-30V, VGS =-10V, ID =-2A 2
Gate-drain charge Qgd 6 nC VDD =-30V, VGS =-10V, ID =-2A 2

CAD (KiCad official)

  • Symbol: PJM2309PSC
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pjm2309psc-etched.step / pjm2309psc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm2309psc.step / pjm2309psc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (7 pp, sha256 0bab53e67c84bba4, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF