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PJM2301PSA-S

Public Made by Adom

by adom

PJSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PJM2301PSA-S

PJSEMI · MOSFETs · SOT-23

PJM2301PSA-S from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal of the P-channel enhancement MOSFET, with gate-source voltage rated at ±12 V (VGS).
2 Source passive Source terminal, the reference for VGS and the source of the body diode, rated for a continuous source-drain diode current of -2 A.
3 Drain passive Drain terminal, rated for a drain-source voltage of -20 V (VDS) and a continuous drain current of -2 A (ID).

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V TC=25 ℃ 1
Gate-Source Voltage VGS -12 12 V TC=25 ℃ 1
Continuous Drain Current ID -2 A TC=25 ℃ 1
Pulsed Drain Current IDM -10 A TC=25 ℃; repetitive rating, pulse width limited by maximum junction temperature (Note 1) 1
Maximum Power Dissipation PD 0.7 W TC=25 ℃ 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Drain-Source Breakdown Voltage V(BR)DSS -20 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 12V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 20 V, VGS = 0 V 2
Gate-Source Threshold Voltage VGS(th) -1 -0.4 V VDS = VGS, ID = - 250 µA 2
Drain-Source On-State Resistance RDS(on) 88 120 mΩ VGS = - 4.5 V, ID = - 2A 2
Drain-Source On-State Resistance RDS(on) 120 180 mΩ VGS = - 2.5 V, ID = - 1A 2
Turn-On Delay Time td(on) 11 20 ns VDD = - 10 V, RL = 10 Ω ID = - 1 A, VGEN = - 4.5 V, RG = 1 Ω 2
Rise Time tr 35 60 ns VDD = - 10 V, RL = 10 Ω ID = - 1 A, VGEN = - 4.5 V, RG = 1 Ω 2
Turn-Off Delay Time td(off) 30 50 ns VDD = - 10 V, RL = 10 Ω ID = - 1 A, VGEN = - 4.5 V, RG = 1 Ω 2
Fall Time tf 10 20 ns VDD = - 10 V, RL = 10 Ω ID = - 1 A, VGEN = - 4.5 V, RG = 1 Ω 2
Continuous Source-Drain Diode Current IS -2 A 2
Body Diode Voltage VSD -1.2 V IS = - 2 A 2
Forward Transconductance gfs 4 S VDS = - 5 V, ID = - 2A 2
Input Capacitance Ciss 405 pF VDS = - 10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 75 pF VDS = - 10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 55 pF VDS = - 10 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 2.9 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 2A 2
Gate-Source Charge Qgs 0.45 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 2A 2
Gate-Drain Charge Qgd 0.75 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 2A 2
Thermal Resistance, Junction-to-Ambient RθJA 178 ℃/W Surface mounted on FR4 Board, t ≤ 10 sec (Note 2) 1

CAD (KiCad official)

  • Symbol: PJM2301PSA-S
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pjm2301psa-s-etched.step / pjm2301psa-s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm2301psa-s.step / pjm2301psa-s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (7 pp, sha256 536ec5af67624b37, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF