# PJM15P40TE

**PJSEMI** · MOSFETs · TO-252

PJM15P40TE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate terminal; the datasheet gives a gate-source voltage rating of ±20 V (VGS). |
| 2 | Drain | passive | MOSFET drain terminal; the datasheet rates drain-source voltage at 40 V and continuous drain current at 15 A. |
| 3 | Source | passive | MOSFET source terminal; the datasheet rates the source-drain diode forward current at 15 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | -VDS |  |  | 40 | V |  | 1 |
| Gate-Source Voltage | -VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | -ID |  |  | 15 | A |  | 1 |
| Drain Current-Pulsed | -IDM |  |  | 60 | A | Note1 | 1 |
| Maximum Power Dissipation | PD |  |  | 35 | W |  | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 49 | mJ | Note2 (EAS condition: TJ=25℃, VDD=-20V, VG=-10V, RG=25Ω, L=0.5mH, IAS=-14A) | 1 |
| Drain-Source Breakdown Voltage | -V(BR)DSS | 40 |  |  | V | VGS=0V,ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | -IDSS |  |  | 1 | μA | VDS=-40V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | -VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 24 | 35 | mΩ | VGS=-10V,ID=-15A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 32 | 48 | mΩ | VGS=-4.5V,ID=-10A | 2 |
| Diode Forward Voltage | -VSD |  |  | 1.2 | V | VGS=0V,IS=-15A | 2 |
| Diode Forward Current | -IS |  |  | 15 | A |  | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 3.57 |  | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `PJM15P40TE`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `pjm15p40te-etched.step` / `pjm15p40te-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pjm15p40te.step` / `pjm15p40te.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [PJSEMI datasheet](docs/pjm15p40te-datasheet.pdf) (8 pp, sha256 `96eb0484fd8f333d`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pjm15p40te-datasheet.pdf)