component

PJM150N30TE

Public Made by Adom

by adom

PJSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorspjm150n30tefactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
pjm150n30te / README.md
History Download
Ray Publish 0.1.0 bed07dd 18d ago

PJM150N30TE

PJSEMI · MOSFETs · TO-252

PJM150N30TE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-source voltage limited to ±20 V, with RDS(on) specified at VGS=10 V and 4.5 V.
2 Drain passive Drain terminal (also the tab); VDS max 30 V and continuous drain current 150 A.
3 Source passive Source terminal; carries up to 150 A continuous source current through the body diode.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-Resistance RDS(on) 2.5 3.4 mΩ VGS=10V,ID=30A 2
Drain-Source On-Resistance RDS(on) 3.6 4.8 mΩ VGS=4.5V,ID=20A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=30A 2
Diode Forward Current IS 150 A 2
Drain-Source Voltage VDS 30 V 25℃ case temperature 1
Gate-Source Voltage VGS -20 20 V 25℃ case temperature 1
Drain Current-Continuous ID 150 A 25℃ case temperature 1
Drain Current-Pulsed IDM 600 A 25℃ case temperature 1
Maximum Power Dissipation PD 72 W 25℃ case temperature 1
Single pulse avalanche energy EAS 182 mJ TJ=25℃,VDD=20V, VG=10V, RG=25Ω, L=0.5mH, IAS=27A 1
Junction Temperature TJ 150 °C 25℃ case temperature 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Case RθJC 1.7 °C/W 1
Forward Transconductance gFS 13 S VDS=5V,ID=2A 2
Input Capacitance Ciss 3811 pF VDS=15V,VGS=0V,f=1MHz 2
Output Capacitance Coss 443 pF VDS=15V,VGS=0V,f=1MHz 2
Reverse Transfer Capacitance Crss 337 pF VDS=15V,VGS=0V,f=1MHz 2
Gate Resistance Rg 1.65 Ω VDS=0V,VGS=0V,f=1MHz 2
Total Gate Charge Qg 67 nC VDS=30V, ID=15A, VGS=10V 2
Gate-Source Charge Qgs 11 nC VDS=30V, ID=15A, VGS=10V 2
Gate-Drain Charge Qgd 19 nC VDS=30V, ID=15A, VGS=10V 2
Turn-on Delay Time td(on) 10 nS VDD=15V, ID=30A, VGS=10V, RGEN=3Ω 2
Turn-on Rise Time tr 19 nS VDD=15V, ID=30A, VGS=10V, RGEN=3Ω 2
Turn-off Delay Time td(off) 50 nS VDD=15V, ID=30A, VGS=10V, RGEN=3Ω 2
Turn-off Fall Time tf 20 nS VDD=15V, ID=30A, VGS=10V, RGEN=3Ω 2

CAD (KiCad official)

  • Symbol: PJM150N30TE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: pjm150n30te-etched.step / pjm150n30te-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm150n30te.step / pjm150n30te.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (8 pp, sha256 6e75a51db697a17f, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF