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Contents

README

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PJM12P30PA

PJSEMI · MOSFETs · SOP-8

PJM12P30PA from PJSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the P-channel MOSFET, with continuous drain current rated -12 A at 25℃ ambient.
2 Source passive Source terminal of the P-channel MOSFET, with continuous drain current rated -12 A at 25℃ ambient.
3 Source passive Source terminal of the P-channel MOSFET, with continuous drain current rated -12 A at 25℃ ambient.
4 Gate input Gate terminal of the P-channel MOSFET, with gate-source voltage rated ±20 V.
5 Drain passive Drain terminal of the P-channel MOSFET, with drain-source voltage rated VDS = -30 V.
6 Drain passive Drain terminal of the P-channel MOSFET, with drain-source voltage rated VDS = -30 V.
7 Drain passive Drain terminal of the P-channel MOSFET, with drain-source voltage rated VDS = -30 V.
8 Drain passive Drain terminal of the P-channel MOSFET, with drain-source voltage rated VDS = -30 V.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage -VDS 30 V 1
Gate-Source Voltage -VGS -20 20 V 1
Drain Current-Continuous -ID 12 A 1
Drain Current-Pulsed -IDM 48 A Note1 1
Maximum Power Dissipation PD 3 W 1
Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Maximum Junction-to-Case RθJC 41.7 °C/W Note2 1
Drain-Source Breakdown Voltage -V(BR)DSS 30 V VGS=0V,ID=-250μA 2
Zero Gate Voltage Drain Current -IDSS 1 μA VDS=-30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage -VGS(th) 1 3 V VDS=VGS,ID=-250μA 2
Drain-Source On-Resistance RDS(on) 8.5 10.5 mΩ VGS=-10V,ID=-12A 2
Drain-Source On-Resistance RDS(on) 10 12 mΩ VGS=-4.5V,ID=-10A 2
Forward Transconductance gFS 20 S VDS=-5V,ID=-10A 2
Diode Forward Voltage -VSD 1.5 V VGS=0V,IS=-12A 2
Diode Forward Current -IS 12 A 2

CAD (KiCad official)

  • Symbol: PJM12P30PA
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: pjm12p30pa-etched.step / pjm12p30pa-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm12p30pa.step / pjm12p30pa.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (5 pp, sha256 317aa239d28a9ece, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF