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Ray Publish 0.1.0 36f7b6b 7d ago

PJM123NSA

PJSEMI · MOSFETs · SOT-23

PJM123NSA from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel enhancement MOSFET; the absolute maximum gate-source voltage is ±20 V (VGS).
2 Source passive Source terminal of the MOSFET; the source-drain diode is rated for a continuous source current IS of 0.17 A maximum with a forward voltage VSD of 1.3 V maximum at VGS = 0 V, IS = 0.34 A.
3 Drain passive Drain terminal of the MOSFET; the absolute maximum drain-source voltage is 100 V (VDS) and the continuous drain current is 0.17 A (ID) at TC = 25 ℃.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 0.17 A 1
Pulsed Drain Current IDM 0.68 A tp=10μs 1
Power Dissipation PD 0.9 W 1
Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250μA 2
Gate Leakage Current IGSS -10 10 μA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS =100V, VGS = 0V 2
Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250μA 2
Drain-Source On-Resistance (VGS = 10V) RDS(ON) 3.5 6 Ω VGS = 10V, ID =0.17A 2
Drain-Source On-Resistance (VGS = 4.5V) RDS(ON) 3.8 10 Ω VGS = 4.5V, ID =0.17A 2
Forward transconductance gfs 80 mS VDS = 10V, ID = 0.17A 2
Input Capacitance Ciss 29 60 pF VDS = 25V, VGS = 0V, f = 1MHz 2
Output Capacitance Coss 10 15 pF 2
Reverse Transfer Capacitance Crss 2 6 pF 2
Turn-On Delay Time td(on) 8 ns VDD=30V, VGS=10V, RGEN=50Ω, ID=0.28A 2
Turn-On Rise Time tr 8 ns 2
Turn-Off Delay Time td(off) 13 ns 2
Turn-Off Fall Time tf 16 ns 2
Total Gate Charge Qg 1.4 2 nC VDS=10V, VGS=10V, ID=0.22A 2
Gate-Source Charge Qgs 0.15 0.25 nC 2
Gate-Drain Charge Qgd 0.2 0.4 nC 2
Source-Drain Diode Current IS 0.17 A 2
Forward Diode Voltage VSD 1.3 V VGS = 0V, IS = 0.34A 2
Maximum Junction-to-Ambient Thermal Resistance RθJA 139 °C/W Note 1: surface mounted on FR4 board, minimum recommended pad size 1

CAD (KiCad official)

  • Symbol: PJM123NSA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pjm123nsa-etched.step / pjm123nsa-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm123nsa.step / pjm123nsa.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (6 pp, sha256 12f2cb3abc37435e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF