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Contents

README

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PJM10H15NTE

PJSEMI · MOSFETs · TO-252

PJM10H15NTE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with VGS rated at ±20 V maximum and threshold voltage of 1 V min to 3 V max at ID=250μA.
2 Drain passive Drain terminal, rated for VDS of 100 V and continuous drain current of 15 A (60 A pulsed).
3 Source passive Source terminal, with body diode forward current IS of 30 A maximum.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -1 1 μA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.9 3 V VDS=VGS,ID=250μA 2
Drain-Source On-Resistance RDS(on) 81 100 mΩ VGS=10V,ID=10A 2
Drain-Source On-Resistance RDS(on) 86 130 mΩ VGS=4.5V,ID=8A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=30A 2
Diode Forward Current IS 30 A 2
Drain-Source Voltage VDS 100 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous ID 15 A TC=25℃ 1
Drain Current-Pulsed IDM 60 A TC=25℃ 1
Maximum Power Dissipation PD 46 W TC=25℃ 1
Single Pulse Avalanche Energy EAS 20 mJ TJ=25℃,VDD=50V, VG=10V, RG=25Ω, L=0.5mH, IAS=9A 1
Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Case RθJC 2.7 °C/W 1
Forward Transconductance gFS 7.5 S VDS=5V,ID=2A 2
Input Capacitance Ciss 1034 pF VDS=30V,VGS=0V,f=1MHz 2
Output Capacitance Coss 36 pF VDS=30V,VGS=0V,f=1MHz 2
Reverse Transfer Capacitance Crss 35 pF VDS=30V,VGS=0V,f=1MHz 2
Gate Resistance Rg 2.2 Ω VDS=0V,VGS=0V,f=1MHz 2
Total Gate Charge Qg 22 nC VDS=50V,ID=10A,VGS=10V 2
Gate-Source Charge Qgs 3 nC VDS=50V,ID=10A,VGS=10V 2
Gate-Drain Charge Qgd 6.1 nC VDS=50V,ID=10A,VGS=10V 2
Turn-on Delay Time td(on) 14 nS VDD=50V,ID=10A,VGS=10V,RGEN=3Ω 2
Turn-on Rise Time tr 5.5 nS VDD=50V,ID=10A,VGS=10V,RGEN=3Ω 2
Turn-off Delay Time td(off) 28 nS VDD=50V,ID=10A,VGS=10V,RGEN=3Ω 2
Turn-off Fall Time tf 5.2 nS VDD=50V,ID=10A,VGS=10V,RGEN=3Ω 2

CAD (KiCad official)

  • Symbol: PJM10H15NTE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: pjm10h15nte-etched.step / pjm10h15nte-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm10h15nte.step / pjm10h15nte.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (8 pp, sha256 db2380dee14e9a98, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF