component
PJM100N30TE
Public Made by Adomby adom
PJSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| pjm100n30te-etched.glb | 8d ago |
| pjm100n30te-etched.step | 8d ago |
| pjm100n30te-hero.glb | 8d ago |
| pjm100n30te-hero.overlay.json | 8d ago |
| pjm100n30te.glb | 8d ago |
| pjm100n30te.kicad_mod | 8d ago |
| pjm100n30te.kicad_sym | 8d ago |
| pjm100n30te.lbr | 8d ago |
| pjm100n30te.step | 8d ago |
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| verification.json | 8d ago |
PJM100N30TE
PJSEMI · MOSFETs · TO-252
PJM100N30TE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate drives the MOSFET; the gate-source voltage is rated at ±20 V (VGS) and the gate threshold is 1 V to 2.5 V at ID = 250 μA. |
| 2 | Drain | passive | Drain is the MOSFET drain terminal, rated for a drain-source voltage of 30 V (VDS) and a continuous drain current of 100 A (ID). |
| 3 | Source | passive | Source is the MOSFET source terminal, which is the reference for VGS; the body diode forward current is rated at 100 A (IS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 100 | A | 1 | |||
| Drain Current-Pulsed | IDM | 400 | A | Note1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 78 | W | 1 | |||
| Single pulse avalanche energy | EAS | 64 | mJ | Note2: TJ=25℃, VDD=15V, VG=10V, RG=25Ω, L=0.5mH, IAS=16A | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.6 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | 2.9 | 3.8 | mΩ | VGS=10V, ID=30A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 4 | 5.2 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=30A | 2 | ||
| Diode Forward Current | IS | 100 | A | 2 |
CAD (KiCad official)
- Symbol:
PJM100N30TE - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
pjm100n30te-etched.step/pjm100n30te-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm100n30te.step/pjm100n30te.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (8 pp, sha256
199fc1d15267642e, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).