component
PJM09N40PA
Public Made by Adomby adom
PJSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PJM09N40PA
PJSEMI · MOSFETs · SOP-8
PJM09N40PA from PJSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V absolute maximum. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V absolute maximum. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V absolute maximum. |
| 4 | Gate | input | Gate control terminal, with gate-source voltage rated at ±20 V and gate threshold voltage of 1.0 to 2.5 V. |
| 5 | Drain | passive | Drain terminal of the N-channel MOSFET, rated at 40 V drain-source voltage and 9 A continuous drain current. |
| 6 | Drain | passive | Drain terminal of the N-channel MOSFET, rated at 40 V drain-source voltage and 9 A continuous drain current. |
| 7 | Drain | passive | Drain terminal of the N-channel MOSFET, rated at 40 V drain-source voltage and 9 A continuous drain current. |
| 8 | Drain | passive | Drain terminal of the N-channel MOSFET, rated at 40 V drain-source voltage and 9 A continuous drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 9 | A | 1 | |||
| Drain Current-Pulsed | IDM | 32 | A | Note1 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 12.9 | mJ | Note4 | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 40 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.65 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | 18 | 25 | mΩ | VGS=10V,ID=8A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 25 | 35 | mΩ | VGS=4.5V,ID=5A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=9A | 2 | ||
| Diode Forward Current | IS | 9 | A | 2 | |||
| Forward Transconductance | gFS | 6.6 | S | VDS=5V,ID=2A | 2 | ||
| Input Capacitance | Ciss | 708 | pF | VDS=20V,VGS=0V,f=1MHz | 2 | ||
| Output Capacitance | Coss | 61 | pF | VDS=20V,VGS=0V,f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 50 | pF | VDS=20V,VGS=0V,f=1MHz | 2 | ||
| Gate Resistance | Rg | 2 | Ω | VDS=0V,VGS=0V,f=1MHz | 2 | ||
| Total Gate Charge | Qg | 12 | nC | VDS=20V,ID=8A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 3.2 | nC | VDS=20V,ID=8A, VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 3.1 | nC | VDS=20V,ID=8A, VGS=10V | 2 | ||
| Turn-on Delay Time | td(on) | 4 | nS | VDD=20V, RL=2.5Ω, VGS=10V,RGEN=3Ω | 2 | ||
| Turn-on Rise Time | tr | 3 | nS | VDD=20V, RL=2.5Ω, VGS=10V,RGEN=3Ω | 2 | ||
| Turn-off Delay Time | td(off) | 15 | nS | VDD=20V, RL=2.5Ω, VGS=10V,RGEN=3Ω | 2 | ||
| Turn-off Fall Time | tf | 2 | nS | VDD=20V, RL=2.5Ω, VGS=10V,RGEN=3Ω | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 | °C/W | Note2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
CAD (KiCad official)
- Symbol:
PJM09N40PA - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
pjm09n40pa-etched.step/pjm09n40pa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm09n40pa.step/pjm09n40pa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (7 pp, sha256
7945d23831b477ed, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PJM09N40PA
**PJSEMI** · MOSFETs · SOP-8
PJM09N40PA from PJSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V absolute maximum. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V absolute maximum. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V absolute maximum. |
| 4 | Gate | input | Gate control terminal, with gate-source voltage rated at ±20 V and gate threshold voltage of 1.0 to 2.5 V. |
| 5 | Drain | passive | Drain terminal of the N-channel MOSFET, rated at 40 V drain-source voltage and 9 A continuous drain current. |
| 6 | Drain | passive | Drain terminal of the N-channel MOSFET, rated at 40 V drain-source voltage and 9 A continuous drain current. |
| 7 | Drain | passive | Drain terminal of the N-channel MOSFET, rated at 40 V drain-source voltage and 9 A continuous drain current. |
| 8 | Drain | passive | Drain terminal of the N-channel MOSFET, rated at 40 V drain-source voltage and 9 A continuous drain current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 40 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous | ID | | | 9 | A | | 1 |
| Drain Current-Pulsed | IDM | | | 32 | A | Note1 | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 12.9 | mJ | Note4 | 1 |
| Maximum Power Dissipation | PD | | | 2.5 | W | | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 40 | | | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=40V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.65 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 18 | 25 | mΩ | VGS=10V,ID=8A | 2 |
| Drain-Source On-Resistance | RDS(on) | | 25 | 35 | mΩ | VGS=4.5V,ID=5A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=9A | 2 |
| Diode Forward Current | IS | | | 9 | A | | 2 |
| Forward Transconductance | gFS | | 6.6 | | S | VDS=5V,ID=2A | 2 |
| Input Capacitance | Ciss | | 708 | | pF | VDS=20V,VGS=0V,f=1MHz | 2 |
| Output Capacitance | Coss | | 61 | | pF | VDS=20V,VGS=0V,f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 50 | | pF | VDS=20V,VGS=0V,f=1MHz | 2 |
| Gate Resistance | Rg | | 2 | | Ω | VDS=0V,VGS=0V,f=1MHz | 2 |
| Total Gate Charge | Qg | | 12 | | nC | VDS=20V,ID=8A, VGS=10V | 2 |
| Gate-Source Charge | Qgs | | 3.2 | | nC | VDS=20V,ID=8A, VGS=10V | 2 |
| Gate-Drain Charge | Qgd | | 3.1 | | nC | VDS=20V,ID=8A, VGS=10V | 2 |
| Turn-on Delay Time | td(on) | | 4 | | nS | VDD=20V, RL=2.5Ω, VGS=10V,RGEN=3Ω | 2 |
| Turn-on Rise Time | tr | | 3 | | nS | VDD=20V, RL=2.5Ω, VGS=10V,RGEN=3Ω | 2 |
| Turn-off Delay Time | td(off) | | 15 | | nS | VDD=20V, RL=2.5Ω, VGS=10V,RGEN=3Ω | 2 |
| Turn-off Fall Time | tf | | 2 | | nS | VDD=20V, RL=2.5Ω, VGS=10V,RGEN=3Ω | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | 50 | | °C/W | Note2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
## CAD (KiCad official)
- Symbol: `PJM09N40PA`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `pjm09n40pa-etched.step` / `pjm09n40pa-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pjm09n40pa.step` / `pjm09n40pa.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [PJSEMI datasheet](docs/pjm09n40pa-datasheet.pdf) (7 pp, sha256 `7945d23831b477ed`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pjm09n40pa-datasheet.pdf)