component
PJM07P30PA
Public Made by Adomby adom
PJSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PJM07P30PA
PJSEMI · MOSFETs · SOP-8
PJM07P30PA from PJSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel MOSFET, bonded together with pins 2 and 3 (pins 1,2,3 are Source). |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, bonded together with pins 1 and 3 (pins 1,2,3 are Source). |
| 3 | Source | passive | Source terminal of the P-channel MOSFET, bonded together with pins 1 and 2 (pins 1,2,3 are Source). |
| 4 | Gate | input | Gate terminal that controls the P-channel MOSFET; gate-source voltage is rated at ±20 V. |
| 5 | Drain | passive | Drain terminal of the P-channel MOSFET, bonded together with pins 6, 7 and 8 (pins 5,6,7,8 are Drain). |
| 6 | Drain | passive | Drain terminal of the P-channel MOSFET, bonded together with pins 5, 7 and 8 (pins 5,6,7,8 are Drain). |
| 7 | Drain | passive | Drain terminal of the P-channel MOSFET, bonded together with pins 5, 6 and 8 (pins 5,6,7,8 are Drain). |
| 8 | Drain | passive | Drain terminal of the P-channel MOSFET, bonded together with pins 5, 6 and 7 (pins 5,6,7,8 are Drain). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | -V(BR)DSS | 30 | V | VGS=0V,ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | -IDSS | 1 | μA | VDS=-30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | -VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-Resistance at VGS=-10V | RDS(on) | 22 | 28 | mΩ | VGS=-10V, ID=-7A | 2 | |
| Drain-Source On-Resistance at VGS=-4.5V | RDS(on) | 35 | 50 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Diode Forward Voltage | -VSD | 1.2 | V | VGS=0V,IS=-7A | 2 | ||
| Diode Forward Current | -IS | 7 | A | 2 | |||
| Drain-Source Voltage | -VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | -ID | 7 | A | 1 | |||
| Drain Current-Pulsed | -IDM | 28 | A | Note1 | 1 | ||
| Maximum Power Dissipation | PD | 3 | W | 1 | |||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | Note2 | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 41.7 | °C/W | Note3 | 1 | ||
| Input Capacitance | Ciss | 610 | pF | VDS=-15V,VGS=0V,f=1MHz | 2 | ||
| Output Capacitance | Coss | 116 | pF | VDS=-15V,VGS=0V,f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 93.5 | pF | VDS=-15V,VGS=0V,f=1MHz | 2 | ||
| Gate Resistance | Rg | 15.8 | Ω | VDS=0V,VGS=0V,f=1MHz | 2 | ||
| Forward Transconductance | gFS | 4.7 | S | VDS=-5V,ID=-1A | 2 | ||
| Total Gate Charge | Qg | 51 | nC | VDS=-15V, ID=-8A, VGS=-10V | 2 | ||
| Gate-Source Charge | Qgs | 9.8 | nC | VDS=-15V, ID=-8A, VGS=-10V | 2 | ||
| Gate-Drain Charge | Qgd | 8.2 | nC | VDS=-15V, ID=-8A, VGS=-10V | 2 | ||
| Turn-on Delay Time | td(on) | 13 | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6Ω | 2 | ||
| Turn-on Rise Time | tr | 15 | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6Ω | 2 | ||
| Turn-off Delay Time | td(off) | 198 | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6Ω | 2 | ||
| Turn-off Fall Time | tf | 98 | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6Ω | 2 |
CAD (KiCad official)
- Symbol:
PJM07P30PA - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
pjm07p30pa-etched.step/pjm07p30pa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm07p30pa.step/pjm07p30pa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (7 pp, sha256
b2aa18eec42be2f3, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PJM07P30PA
**PJSEMI** · MOSFETs · SOP-8
PJM07P30PA from PJSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel MOSFET, bonded together with pins 2 and 3 (pins 1,2,3 are Source). |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, bonded together with pins 1 and 3 (pins 1,2,3 are Source). |
| 3 | Source | passive | Source terminal of the P-channel MOSFET, bonded together with pins 1 and 2 (pins 1,2,3 are Source). |
| 4 | Gate | input | Gate terminal that controls the P-channel MOSFET; gate-source voltage is rated at ±20 V. |
| 5 | Drain | passive | Drain terminal of the P-channel MOSFET, bonded together with pins 6, 7 and 8 (pins 5,6,7,8 are Drain). |
| 6 | Drain | passive | Drain terminal of the P-channel MOSFET, bonded together with pins 5, 7 and 8 (pins 5,6,7,8 are Drain). |
| 7 | Drain | passive | Drain terminal of the P-channel MOSFET, bonded together with pins 5, 6 and 8 (pins 5,6,7,8 are Drain). |
| 8 | Drain | passive | Drain terminal of the P-channel MOSFET, bonded together with pins 5, 6 and 7 (pins 5,6,7,8 are Drain). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | -V(BR)DSS | 30 | | | V | VGS=0V,ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | -IDSS | | | 1 | μA | VDS=-30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | -VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-Resistance at VGS=-10V | RDS(on) | | 22 | 28 | mΩ | VGS=-10V, ID=-7A | 2 |
| Drain-Source On-Resistance at VGS=-4.5V | RDS(on) | | 35 | 50 | mΩ | VGS=-4.5V, ID=-4A | 2 |
| Diode Forward Voltage | -VSD | | | 1.2 | V | VGS=0V,IS=-7A | 2 |
| Diode Forward Current | -IS | | | 7 | A | | 2 |
| Drain-Source Voltage | -VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous | -ID | | | 7 | A | | 1 |
| Drain Current-Pulsed | -IDM | | | 28 | A | Note1 | 1 |
| Maximum Power Dissipation | PD | | | 3 | W | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 20 | mJ | Note2 | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | 41.7 | | °C/W | Note3 | 1 |
| Input Capacitance | Ciss | | 610 | | pF | VDS=-15V,VGS=0V,f=1MHz | 2 |
| Output Capacitance | Coss | | 116 | | pF | VDS=-15V,VGS=0V,f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 93.5 | | pF | VDS=-15V,VGS=0V,f=1MHz | 2 |
| Gate Resistance | Rg | | 15.8 | | Ω | VDS=0V,VGS=0V,f=1MHz | 2 |
| Forward Transconductance | gFS | | 4.7 | | S | VDS=-5V,ID=-1A | 2 |
| Total Gate Charge | Qg | | 51 | | nC | VDS=-15V, ID=-8A, VGS=-10V | 2 |
| Gate-Source Charge | Qgs | | 9.8 | | nC | VDS=-15V, ID=-8A, VGS=-10V | 2 |
| Gate-Drain Charge | Qgd | | 8.2 | | nC | VDS=-15V, ID=-8A, VGS=-10V | 2 |
| Turn-on Delay Time | td(on) | | 13 | | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6Ω | 2 |
| Turn-on Rise Time | tr | | 15 | | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6Ω | 2 |
| Turn-off Delay Time | td(off) | | 198 | | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6Ω | 2 |
| Turn-off Fall Time | tf | | 98 | | nS | VDD=-15V, ID=-1A, VGS=-10V, RGEN=6Ω | 2 |
## CAD (KiCad official)
- Symbol: `PJM07P30PA`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `pjm07p30pa-etched.step` / `pjm07p30pa-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pjm07p30pa.step` / `pjm07p30pa.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [PJSEMI datasheet](docs/pjm07p30pa-datasheet.pdf) (7 pp, sha256 `b2aa18eec42be2f3`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pjm07p30pa-datasheet.pdf)