component
PJM05P30PA
Public Made by Adomby adom
PJSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 4h ago |
| viewers | 4h ago |
| package.json | 4h ago |
| page.json | 4h ago |
| pjm05p30pa-etched.glb | 4h ago |
| pjm05p30pa-etched.step | 4h ago |
| pjm05p30pa-hero.glb | 4h ago |
| pjm05p30pa-hero.overlay.json | 4h ago |
| pjm05p30pa.glb | 4h ago |
| pjm05p30pa.kicad_mod | 4h ago |
| pjm05p30pa.kicad_sym | 4h ago |
| pjm05p30pa.lbr | 4h ago |
| pjm05p30pa.step | 4h ago |
| README.md | 4h ago |
PJM05P30PA
PJSEMI · MOSFETs · SOP-8
PJM05P30PA from PJSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source pin, one of three commonly tied source pins, with the device rated at a drain-source voltage of 30 V and gate-source voltage of ±20 V. |
| 2 | Source | passive | Source pin, one of three commonly tied source pins, with the device rated at a drain-source voltage of 30 V and gate-source voltage of ±20 V. |
| 3 | Source | passive | Source pin, one of three commonly tied source pins, with the device rated at a drain-source voltage of 30 V and gate-source voltage of ±20 V. |
| 4 | Gate | input | Gate pin, with gate-source voltage limited to ±20 V per the absolute maximum ratings. |
| 5 | Drain | passive | Drain pin, carrying continuous drain current up to 5.1 A with a drain-source voltage rating of 30 V. |
| 6 | Drain | passive | Drain pin, carrying continuous drain current up to 5.1 A with a drain-source voltage rating of 30 V. |
| 7 | Drain | passive | Drain pin, carrying continuous drain current up to 5.1 A with a drain-source voltage rating of 30 V. |
| 8 | Drain | passive | Drain pin, carrying continuous drain current up to 5.1 A with a drain-source voltage rating of 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | -VDS | 30 | V | 1 | |||
| Gate-Source Voltage | -VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | -ID | 5.1 | A | 1 | |||
| Drain Current-Pulsed | -IDM | 20.4 | A | Repetitive rating, pulse width limited by maximum junction temperature (Note 1) | 1 | ||
| Maximum Power Dissipation | PD | 2.15 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 58 | °C/W | Surface mounted on FR4 board, t ≤ 10 sec (Note 2) | 1 | ||
| Drain-Source Breakdown Voltage | -V(BR)DSS | 30 | V | VGS=0V,ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | -IDSS | 1 | μA | VDS=-30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | -VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-Resistance at VGS=-10V | RDS(on) | 43 | 55 | mΩ | VGS=-10V,ID=-5.1A | 2 | |
| Drain-Source On-Resistance at VGS=-4.5V | RDS(on) | 65 | 90 | mΩ | VGS=-4.5V,ID=-4.2A | 2 | |
| Forward Transconductance | gFS | 7.5 | S | VDS=-5V,ID=-4A | 2 | ||
| Input Capacitance | Ciss | 596 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 95 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 68 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Turn-on Delay Time | td(on) | 14 | nS | VDD=-15V,VGS=-10V, ID=-1A, RGEN=2.5Ω | 2 | ||
| Turn-on Rise Time | tr | 61 | nS | VDD=-15V,VGS=-10V, ID=-1A, RGEN=2.5Ω | 2 | ||
| Turn-off Delay Time | td(off) | 19 | nS | VDD=-15V,VGS=-10V, ID=-1A, RGEN=2.5Ω | 2 | ||
| Turn-off Fall Time | tf | 10 | nS | VDD=-15V,VGS=-10V, ID=-1A, RGEN=2.5Ω | 2 | ||
| Total Gate Charge | Qg | 6.8 | nC | VDS=-15V,VGS=-10V, ID=-5.1A | 2 | ||
| Gate-Source Charge | Qgs | 1 | nC | VDS=-15V,VGS=-10V, ID=-5.1A | 2 | ||
| Gate-Drain Charge | Qgd | 1.4 | nC | VDS=-15V,VGS=-10V, ID=-5.1A | 2 | ||
| Diode Forward Voltage | -VSD | 0.8 | 1.2 | V | VGS=0V,IS=-5.1A | 2 | |
| Diode Forward Current | -IS | 5.1 | A | 2 |
CAD (KiCad official)
- Symbol:
PJM05P30PA - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
pjm05p30pa-etched.step/pjm05p30pa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm05p30pa.step/pjm05p30pa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (5 pp, sha256
aa4bc3573302c190, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).