PJM02N60SA

{
  "slug": "pjm02n60sa",
  "version": "0.1.0",
  "type": "component",
  "description": "PJSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
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    "transistors-thyristors",
    "pjm02n60sa",
    "factory-2.0.0",
    "extractor-text"
  ],
  "dependencies": {},
  "hero": {
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    "path": "docs/hero.png"
  },
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    "README.md",
    "pjm02n60sa.kicad_sym",
    "pjm02n60sa.kicad_mod",
    "pjm02n60sa.glb",
    "pjm02n60sa.step",
    "pjm02n60sa.lbr",
    "docs/hero.png",
    "docs/pjm02n60sa-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "pjm02n60sa-hero.glb",
    "pjm02n60sa-hero.overlay.json",
    "pjm02n60sa-etched.glb"
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  "component": {
    "mpn": "PJM02N60SA",
    "manufacturer": "PJSEMI",
    "package": "SOT-23",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588920069598416896",
    "parts": {
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      "footprint": "pjm02n60sa.kicad_mod",
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      "model_3d_step": "pjm02n60sa-etched.step",
      "model_3d_step_plain": "pjm02n60sa.step",
      "lbr": "pjm02n60sa.lbr"
    },
    "distributor_links": {
      "lcsc": "C2856840"
    },
    "distributor_check": {
      "checked_at": "2026-10-18T10:46:05Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
      },
      "mouser": {
        "pn": null,
        "status": "quota"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "Gate",
        "type": "input",
        "description": "Gate control terminal of the N-channel enhancement-mode MOSFET, rated for a gate-source voltage of ±20 V (VGS)."
      },
      {
        "number": "2",
        "name": "Source",
        "type": "passive",
        "description": "Source terminal of the MOSFET; the body diode forward voltage is VSD = 1.2 V max at IS = 3 A, VGS = 0 V."
      },
      {
        "number": "3",
        "name": "Drain",
        "type": "passive",
        "description": "Drain terminal of the MOSFET, rated for 60 V drain-source voltage (VDS), 2 A continuous drain current (ID) and 10 A pulsed drain current (IDM)."
      }
    ],
    "provenance": {
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      "factory_chain": {
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        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Part number mismatch: the datasheet pinout diagram, title and header are printed for PJM02160SA, whi; Pin types and descriptions are inferred from the MOSFET schematic and absolute maximum ratings; the "
        ],
        "pages_sent": 7,
        "cost_usd": 0.0281,
        "at": "2026-10-18T10:43:17"
      },
      "datasheet": {
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        "pages": 7,
        "sha256": "d0a0d8e40a9ca714",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "zmin_mm": 0.0,
        "centre_offset_mm": 0.0,
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        "sha256": "dd5d1711204e1d8d26cd11490923bd84340820baa69538c385a4300ec2539bc0",
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}