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PJM02N60SA

Public Made by Adom

by adom

PJSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PJM02N60SA

PJSEMI · MOSFETs · SOT-23

PJM02N60SA from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal of the N-channel enhancement-mode MOSFET, rated for a gate-source voltage of ±20 V (VGS).
2 Source passive Source terminal of the MOSFET; the body diode forward voltage is VSD = 1.2 V max at IS = 3 A, VGS = 0 V.
3 Drain passive Drain terminal of the MOSFET, rated for 60 V drain-source voltage (VDS), 2 A continuous drain current (ID) and 10 A pulsed drain current (IDM).

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 2 A 1
Pulsed Drain Current IDM 10 A Repetitive rating, pulse width limited by junction temperature (Note 1) 1
Operating Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Total Power Dissipation PD 0.9 W 1
Thermal Resistance, Junction to Ambient RθJA 139 ℃/W Surface mounted on FR4 board, t ≤ 10 sec (Note 2) 1
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60V, VGS = 0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 1 2 V VDS = VGS, ID = 250µA (Note 3) 2
Drain-Source On-Resistance RDS(on) 105 mΩ VGS = 10V, ID = 3A (Note 3) 2
Drain-Source On-Resistance RDS(on) 125 mΩ VGS = 4.5V, ID = 2A (Note 3) 2
Forward Transconductance gFS 3 S VDS = 15V, ID = 2A (Note 3) 2
Input Capacitance Ciss 510 pF VDS = 30V, VGS = 0V, f = 1MHz 2
Output Capacitance Coss 34 pF VDS = 30V, VGS = 0V, f = 1MHz 2
Reverse Transfer Capacitance Crss 26 pF VDS = 30V, VGS = 0V, f = 1MHz 2
Total Gate Charge Qg 7.5 nC VDS = 30V, ID = 3A, VGS = 4.5V 2
Gate-Source Charge Qgs 1.4 nC VDS = 30V, ID = 3A, VGS = 4.5V 2
Gate-Drain Charge Qgd 3 nC VDS = 30V, ID = 3A, VGS = 4.5V 2
Turn-On Delay Time td(on) 6 ns VGS = 10V, VDD = 30V, ID = 1.5A, RG = 1Ω 2
Turn-On Rise Time tr 15 ns VGS = 10V, VDD = 30V, ID = 1.5A, RG = 1Ω 2
Turn-Off Delay Time td(off) 15 ns VGS = 10V, VDD = 30V, ID = 1.5A, RG = 1Ω 2
Turn-Off Fall Time tf 10 ns VGS = 10V, VDD = 30V, ID = 1.5A, RG = 1Ω 2
Body Diode Voltage VSD 1.2 V IS = 3A, VGS = 0V 2

CAD (KiCad official)

  • Symbol: PJM02N60SA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pjm02n60sa-etched.step / pjm02n60sa-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm02n60sa.step / pjm02n60sa.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (7 pp, sha256 d0a0d8e40a9ca714, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF