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PIMP31X

Public Made by Adom

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Nexperia Digital Transistors, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PIMP31X

Nexperia · Digital Transistors · TSOP-6

PIMP31X from Nexperia, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND1 power_in GND (emitter) of built-in transistor TR1, serving as the ground reference for that channel.
2 I1 input Input (base) of TR1, with built-in bias resistor R1 = 1 kΩ (0.7 to 1.3 kΩ); input voltage is limited to -10 V to 5 V.
3 O2 output Output (collector) of TR2; limited to a collector-emitter voltage VCEO of -50 V and an output current IO of -500 mA.
4 GND2 power_in GND (emitter) of built-in transistor TR2, serving as the ground reference for that channel.
5 I2 input Input (base) of TR2, with built-in bias resistor R1 = 1 kΩ (0.7 to 1.3 kΩ); input voltage is limited to -10 V to 5 V.
6 O1 output Output (collector) of TR1; limited to a collector-emitter voltage VCEO of -50 V and an output current IO of -500 mA.

Key specifications

Parameter Value
Manufacturer Nexperia
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -50 V open emitter 2
Collector-emitter voltage VCEO -50 V open base 2
Emitter-base voltage VEBO -5 V open collector 2
Input voltage VI -10 5 V 2
Output current IO -500 mA 2
Total power dissipation (per transistor) Ptot 290 mW Tamb ≤ 25 °C [1] 2
Total power dissipation (per device) Ptot 420 mW Tamb ≤ 25 °C [1] 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -55 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance junction to ambient (per transistor) Rth(j-a) 432 K/W in free air [1] 3
Thermal resistance junction to solder point (per transistor) Rth(j-sp) 105 K/W 3
Thermal resistance junction to ambient (per device) Rth(j-a) 298 K/W in free air [1] 3
Collector-base breakdown voltage V(BR)CBO -50 V IC = -100 µA; IE = 0 A; Tamb = 25 °C 4
Collector-emitter breakdown voltage V(BR)CEO -50 V IC = -10 mA; IB = 0 A; Tamb = 25 °C 4
Collector-base cut-off current ICBO -100 nA VCB = -50 V; IE = 0 A; Tamb = 25 °C 4
Collector-emitter cut-off current ICEO -0.5 µA VCE = -50 V; IB = 0 A; Tamb = 25 °C 4
Emitter-base cut-off current IEBO -0.72 mA VEB = -5 V; IC = 0 A; Tamb = 25 °C 4
DC current gain hFE 70 VCE = -5 V; IC = -50 mA; Tamb = 25 °C 4
Collector-emitter saturation voltage VCEsat -100 mV IC = -50 mA; IB = -2.5 mA; Tamb = 25 °C 4
Off-state input voltage VI(off) -0.3 -0.6 -1 V VCE = -5 V; IC = -100 µA; Tamb = 25 °C 4
On-state input voltage VI(on) -0.4 -0.8 -1.4 V VCE = -0.3 V; IC = -20 mA; Tamb = 25 °C 4
Bias resistor 1 (input) R1 0.7 1 1.3 kΩ [1] see Test information 4
Bias resistor ratio R2/R1 9 10 11 [1] see Test information 4

CAD (KiCad official)

  • Symbol: PIMP31X
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: pimp31x-etched.step / pimp31x-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pimp31x.step / pimp31x.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 4e80cf7974d2b8bf, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF