component
PHKD3NQ10T-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PHKD3NQ10T-VB
VBsemi Elec · MOSFETs · SO-8
PHKD3NQ10T-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of N-channel MOSFET 1; the source-drain diode continuous current is rated 5 A at TC = 25 °C. |
| 2 | G1 | input | Gate terminal of N-channel MOSFET 1; the gate-source voltage is limited to ±20 V. |
| 3 | S2 | passive | Source terminal of N-channel MOSFET 2; the source-drain diode continuous current is rated 5 A at TC = 25 °C. |
| 4 | G2 | input | Gate terminal of N-channel MOSFET 2; the gate-source voltage is limited to ±20 V. |
| 5 | D2 | passive | Drain terminal of N-channel MOSFET 2; the drain-source voltage is rated 100 V. |
| 6 | D2 | passive | Drain terminal of N-channel MOSFET 2; the drain-source voltage is rated 100 V. |
| 7 | D1 | passive | Drain terminal of N-channel MOSFET 1; the drain-source voltage is rated 100 V. |
| 8 | D1 | passive | Drain terminal of N-channel MOSFET 1; the drain-source voltage is rated 100 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 5.8 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | 4.4 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | 3.4 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current | ID | 2.5 | A | TA = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 5 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 2.1 | A | TA = 25 °C | 1 | ||
| Single Avalanche Current | IAS | 19 | A | L = 0.1 mH | 1 | ||
| Single Avalanche Energy | EAS | 18 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.2 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 37 | 50 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient | RthJA | 85 | °C/W | Steady state (note c) | 1 | ||
| Maximum Junction-to-Foot (Drain) | RthJF | 17 | 21 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 20 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | 120 | mV/°C | ID = 250 µA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.063 | Ω | VGS = 10 V, ID = 3.4 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.084 | Ω | VGS = 6 V, ID = 2.8 A | 2 | ||
| Forward Transconductance | gfs | 10 | S | VDS = 15 V, ID = 3.4 A | 2 | ||
| Input Capacitance | Ciss | 600 | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 90 | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 50 | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Total Gate Charge | Qg | 13.5 | 20 | nC | VDS = 50 V, VGS = 10 V, ID = 3.4 A | 2 | |
| Total Gate Charge | Qg | 9 | 13.5 | nC | VDS = 50 V, VGS = 6 V, ID = 3.4 A | 2 | |
| Gate-Source Charge | Qgs | 3 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 4.6 | nC | 2 | |||
| Gate Resistance | Rg | 1 | Ω | f = 1 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 15 | 25 | ns | VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 12 | 20 | ns | VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 12 | 20 | ns | VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 10 | 15 | ns | VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 10 | 15 | ns | VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 15 | 25 | ns | VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 5 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 20 | A | 2 | |||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 3.5 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 45 | 70 | ns | IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 80 | 120 | nC | IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Reverse Recovery Fall Time | ta | 33 | ns | 2 | |||
| Reverse Recovery Rise Time | tb | 12 | ns | 2 |
CAD (KiCad official)
- Symbol:
PHKD3NQ10T-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
phkd3nq10t-vb-etched.step/phkd3nq10t-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);phkd3nq10t-vb.step/phkd3nq10t-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
915d9c48a667b9cf, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PHKD3NQ10T-VB
**VBsemi Elec** · MOSFETs · SO-8
PHKD3NQ10T-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of N-channel MOSFET 1; the source-drain diode continuous current is rated 5 A at TC = 25 °C. |
| 2 | G1 | input | Gate terminal of N-channel MOSFET 1; the gate-source voltage is limited to ±20 V. |
| 3 | S2 | passive | Source terminal of N-channel MOSFET 2; the source-drain diode continuous current is rated 5 A at TC = 25 °C. |
| 4 | G2 | input | Gate terminal of N-channel MOSFET 2; the gate-source voltage is limited to ±20 V. |
| 5 | D2 | passive | Drain terminal of N-channel MOSFET 2; the drain-source voltage is rated 100 V. |
| 6 | D2 | passive | Drain terminal of N-channel MOSFET 2; the drain-source voltage is rated 100 V. |
| 7 | D1 | passive | Drain terminal of N-channel MOSFET 1; the drain-source voltage is rated 100 V. |
| 8 | D1 | passive | Drain terminal of N-channel MOSFET 1; the drain-source voltage is rated 100 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 5.8 | A | TC = 25 °C, TJ = 150 °C | 1 |
| Continuous Drain Current | ID | | | 4.4 | A | TC = 70 °C | 1 |
| Continuous Drain Current | ID | | | 3.4 | A | TA = 25 °C | 1 |
| Continuous Drain Current | ID | | | 2.5 | A | TA = 70 °C | 1 |
| Pulsed Drain Current | IDM | | | 20 | A | | 1 |
| Continuous Source-Drain Diode Current | IS | | | 5 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS | | | 2.1 | A | TA = 25 °C | 1 |
| Single Avalanche Current | IAS | | | 19 | A | L = 0.1 mH | 1 |
| Single Avalanche Energy | EAS | | | 18 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 5 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 3.2 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD | | | 2.5 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 1.6 | W | TA = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 37 | 50 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Ambient | RthJA | | | 85 | °C/W | Steady state (note c) | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF | | 17 | 21 | °C/W | Steady state | 1 |
| Drain-Source Breakdown Voltage | VDS | 100 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 100 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 20 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ | | 120 | | mV/°C | ID = 250 µA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.063 | | Ω | VGS = 10 V, ID = 3.4 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.084 | | Ω | VGS = 6 V, ID = 2.8 A | 2 |
| Forward Transconductance | gfs | | 10 | | S | VDS = 15 V, ID = 3.4 A | 2 |
| Input Capacitance | Ciss | | 600 | | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 90 | | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 50 | | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 13.5 | 20 | nC | VDS = 50 V, VGS = 10 V, ID = 3.4 A | 2 |
| Total Gate Charge | Qg | | 9 | 13.5 | nC | VDS = 50 V, VGS = 6 V, ID = 3.4 A | 2 |
| Gate-Source Charge | Qgs | | 3 | | nC | | 2 |
| Gate-Drain Charge | Qgd | | 4.6 | | nC | | 2 |
| Gate Resistance | Rg | | 1 | | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | 15 | 25 | ns | VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 12 | 20 | ns | VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 12 | 20 | ns | VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 10 | 15 | ns | VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 6 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) | | 10 | 15 | ns | VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 15 | 25 | ns | VDD = 50 V, RL = 14.3 Ω, ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS | | | 5 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM | | | 20 | A | | 2 |
| Body Diode Voltage | VSD | | 0.8 | 1.2 | V | IS = 3.5 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | 45 | 70 | ns | IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 80 | 120 | nC | IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Reverse Recovery Fall Time | ta | | 33 | | ns | | 2 |
| Reverse Recovery Rise Time | tb | | 12 | | ns | | 2 |
## CAD (KiCad official)
- Symbol: `PHKD3NQ10T-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `phkd3nq10t-vb-etched.step` / `phkd3nq10t-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `phkd3nq10t-vb.step` / `phkd3nq10t-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/phkd3nq10t-vb-datasheet.pdf) (9 pp, sha256 `915d9c48a667b9cf`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/phkd3nq10t-vb-datasheet.pdf)