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PHD71NQ03LT-HXY

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HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorphd71nq03lt-hxyfactory-2.0.0extractor-text

Verified PHD71NQ03LT-HXY

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: PHD71NQ03LT-HXY · TO-252-2L · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-d8tlub86/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ phd71nq03lt-hxy.kicad_sym✓ phd71nq03lt-hxy.kicad_mod✓ phd71nq03lt-hxy.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

PHD71NQ03LT-HXY

HXY MOSFET · MOSFETs · TO-252-2L

PHD71NQ03LT-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, rated for gate-source voltage VGS of ±20 V and operable at gate voltages as low as 4.5 V.
2 D passive Drain terminal of the N-channel MOSFET, rated for drain-source voltage VDS of 30 V and continuous drain current ID of 50 A at TC=25℃.
3 S passive Source terminal of the N-channel MOSFET, serving as the reference for VGS and VDS.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 50 A TC=25℃, VGS @ 10V 1
Continuous Drain Current ID 30 A TC=100℃, VGS @ 10V 1
Pulsed Drain Current IDM 112 A 1
Single Pulse Avalanche Energy EAS 24.2 mJ 1
Avalanche Current IAS 22 A 1
Total Power Dissipation PD 37.5 W TC=25℃ 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W surface mounted on 1 inch2 FR-4 board with 2OZ copper (note 1) 1
Thermal Resistance Junction-Case RθJC 4 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 7.5 10 mΩ VGS=10V, ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 11 18 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 43 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 112 A 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=1A, TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.0193 V/℃ Reference to 25℃, ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -3.97 mV/℃ 2
Forward Transconductance gfs 34 S VDS=5V, ID=30A 2
Gate Resistance Rg 1.8 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) Qg 9.8 nC VDS=15V, VGS=4.5V, ID=15A 2
Gate-Source Charge Qgs 4.2 nC 2
Gate-Drain Charge Qgd 3.6 nC 2
Turn-On Delay Time Td(on) 4 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Rise Time Tr 8 ns 2
Turn-Off Delay Time Td(off) 31 ns 2
Fall Time Tf 4 ns 2
Input Capacitance Ciss 940 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 131 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 109 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 8.5 nS IF=30A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 2.2 nC IF=30A, dI/dt=100A/µs, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: PHD71NQ03LT-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: phd71nq03lt-hxy-etched.step / phd71nq03lt-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); phd71nq03lt-hxy.step / phd71nq03lt-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 7644d1af21849237, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF