component
PESD8V0S1ULSYL
Public Made by Adomby adom
Nexperia ESD And Surge Protection (TVS/ESD), SOD-882. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PESD8V0S1ULSYL
Nexperia · ESD And Surge Protection (TVS/ESD) · SOD-882
PESD8V0S1ULSYL from Nexperia, in a SOD-882. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the unidirectional ESD protection diode, identified by the marking bar on the package. |
| 2 | A | passive | Anode of the unidirectional ESD protection diode, connected to the protected signal line's return reference. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOD-882 |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| junction temperature | Tj | 150 | °C | 3 | |||
| ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| rated peak pulse current | IPPM | 13 | A | tp = 8/20 µs | 3 | ||
| electrostatic discharge voltage | VESD | 30 | kV | IEC 61000-4-2 (contact discharge) | 3 | ||
| reverse standoff voltage | VRWM | 8 | V | Tamb = 25 °C | 4 | ||
| breakdown voltage | VBR | 8.65 | 9.1 | 9.56 | V | IR = 1 mA; Tamb = 25 °C | 4 |
| reverse leakage current | IRM | 5 | 500 | nA | VRWM = 8 V; Tamb = 25 °C | 4 | |
| diode capacitance | Cd | 70 | 90 | pF | f = 1 MHz; VR = 0 V; Tamb = 25 °C | 4 | |
| clamping voltage | VCL | 9.5 | 11.5 | V | IPP = 1 A; tp = 8/20 µs; Tamb = 25 °C | 4 | |
| clamping voltage | VCL | 22 | 25.5 | V | IPPM = 13 A; tp = 8/20 µs; Tamb = 25 °C | 4 | |
| clamping voltage | VCL | 15.5 | V | IPP = 16 A; tp = TLP; Tamb = 25 °C | 4 | ||
| dynamic resistance | Rdyn | 0.4 | Ω | IR = 10 A; Tamb = 25 °C | 4 |
CAD (KiCad official)
- Symbol:
PESD8V0S1ULSYL - Footprint:
Diode_SMD:D_SOD-882 - 3D model: SOD-882 (KiCad packages3D, STEP)
- 3D model files:
pesd8v0s1ulsyl-etched.step/pesd8v0s1ulsyl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pesd8v0s1ulsyl.step/pesd8v0s1ulsyl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (11 pp, sha256
f3d9a2e6c78fedd8, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PESD8V0S1ULSYL
**Nexperia** · ESD And Surge Protection (TVS/ESD) · SOD-882
PESD8V0S1ULSYL from Nexperia, in a SOD-882. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the unidirectional ESD protection diode, identified by the marking bar on the package. |
| 2 | A | passive | Anode of the unidirectional ESD protection diode, connected to the protected signal line's return reference. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOD-882 |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| junction temperature | Tj | | | 150 | °C | | 3 |
| ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| rated peak pulse current | IPPM | | | 13 | A | tp = 8/20 µs | 3 |
| electrostatic discharge voltage | VESD | | | 30 | kV | IEC 61000-4-2 (contact discharge) | 3 |
| reverse standoff voltage | VRWM | | | 8 | V | Tamb = 25 °C | 4 |
| breakdown voltage | VBR | 8.65 | 9.1 | 9.56 | V | IR = 1 mA; Tamb = 25 °C | 4 |
| reverse leakage current | IRM | | 5 | 500 | nA | VRWM = 8 V; Tamb = 25 °C | 4 |
| diode capacitance | Cd | | 70 | 90 | pF | f = 1 MHz; VR = 0 V; Tamb = 25 °C | 4 |
| clamping voltage | VCL | | 9.5 | 11.5 | V | IPP = 1 A; tp = 8/20 µs; Tamb = 25 °C | 4 |
| clamping voltage | VCL | | 22 | 25.5 | V | IPPM = 13 A; tp = 8/20 µs; Tamb = 25 °C | 4 |
| clamping voltage | VCL | | 15.5 | | V | IPP = 16 A; tp = TLP; Tamb = 25 °C | 4 |
| dynamic resistance | Rdyn | | 0.4 | | Ω | IR = 10 A; Tamb = 25 °C | 4 |
## CAD (KiCad official)
- Symbol: `PESD8V0S1ULSYL`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: SOD-882 (KiCad packages3D, STEP)
- 3D model files: `pesd8v0s1ulsyl-etched.step` / `pesd8v0s1ulsyl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pesd8v0s1ulsyl.step` / `pesd8v0s1ulsyl.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PESD8V0S1ULSYL.pdf) (11 pp, sha256 `f3d9a2e6c78fedd8`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pesd8v0s1ulsyl-datasheet.pdf)