component
PESD5V0F1BRLDYL
Public Made by Adomby adom
Nexperia ESD Protection Devices, DFN1006-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PESD5V0F1BRLDYL
Nexperia · ESD Protection Devices · DFN1006-2
PESD5V0F1BRLDYL from Nexperia, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K1 | passive | Cathode of diode 1 (bidirectional ESD protection, signal line side), with reverse standoff voltage VRWM up to 5.5 V and ESD protection up to 10 kV contact / 15 kV air. |
| 2 | K2 | passive | Cathode of diode 2 (bidirectional ESD protection, connects to ground in typical use), with reverse standoff voltage VRWM up to 5.5 V and 0.4 pF typical capacitance. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | DFN1006-2 |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse standoff voltage | VRWM | 5.5 | V | Tamb = 25 °C | 4 | ||
| Breakdown voltage | VBR | 6 | 8 | 10 | V | IR = 1 mA; Tamb = 25 °C | 4 |
| Reverse leakage current | IRM | 1 | 100 | nA | VRWM = 5 V; Tamb = 25 °C | 4 | |
| Diode capacitance | Cd | 0.4 | 0.55 | pF | f = 1 MHz; VR = 0 V; Tamb = 25 °C | 4 | |
| Clamping voltage | VCL | 11 | V | IPP = 1 A; tp = 8/20 μs; Tamb = 25 °C | 4 | ||
| Clamping voltage | VCL | 15 | V | IPPM = 2.5 A; tp = 8/20 μs; Tamb = 25 °C | 4 | ||
| Rated peak pulse current | IPPM | 2.5 | A | tp = 8/20 µs | 3 | ||
| Junction temperature | Tj | 125 | °C | 3 | |||
| Ambient temperature | Tamb | -40 | 125 | °C | 3 | ||
| Storage temperature | Tstg | -55 | 125 | °C | 3 | ||
| Electrostatic discharge voltage, contact | VESD | 10 | kV | IEC 61000-4-2; contact discharge | 3 | ||
| Electrostatic discharge voltage, air | VESD | 15 | kV | IEC 61000-4-2; air discharge | 3 | ||
| Electrostatic discharge voltage, HBM | VESD | 10 | kV | MIL-STD-883; human body model (HBM) | 3 | ||
| Dynamic resistance | Rdyn | 1.5 | Ω | IR = 10 A; tp = 100 ns; Tamb = 25 °C | 4 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | pet | MIL-STD-883; human body model (HBM) - 10 kV [1] Device stressed with ten non-repetitive current pulses (8/20 µs exponential decay waveform according to IEC 61000-4-5). | 3 |
CAD (KiCad official)
- Symbol:
PESD5V0F1BRLDYL - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2 (KiCad packages3D, STEP)
- 3D model files:
pesd5v0f1brldyl-etched.step/pesd5v0f1brldyl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pesd5v0f1brldyl.step/pesd5v0f1brldyl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (11 pp, sha256
3eaa702a6535101c, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PESD5V0F1BRLDYL
**Nexperia** · ESD Protection Devices · DFN1006-2
PESD5V0F1BRLDYL from Nexperia, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K1 | passive | Cathode of diode 1 (bidirectional ESD protection, signal line side), with reverse standoff voltage VRWM up to 5.5 V and ESD protection up to 10 kV contact / 15 kV air. |
| 2 | K2 | passive | Cathode of diode 2 (bidirectional ESD protection, connects to ground in typical use), with reverse standoff voltage VRWM up to 5.5 V and 0.4 pF typical capacitance. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | DFN1006-2 |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse standoff voltage | VRWM | | | 5.5 | V | Tamb = 25 °C | 4 |
| Breakdown voltage | VBR | 6 | 8 | 10 | V | IR = 1 mA; Tamb = 25 °C | 4 |
| Reverse leakage current | IRM | | 1 | 100 | nA | VRWM = 5 V; Tamb = 25 °C | 4 |
| Diode capacitance | Cd | | 0.4 | 0.55 | pF | f = 1 MHz; VR = 0 V; Tamb = 25 °C | 4 |
| Clamping voltage | VCL | | | 11 | V | IPP = 1 A; tp = 8/20 μs; Tamb = 25 °C | 4 |
| Clamping voltage | VCL | | | 15 | V | IPPM = 2.5 A; tp = 8/20 μs; Tamb = 25 °C | 4 |
| Rated peak pulse current | IPPM | | | 2.5 | A | tp = 8/20 µs | 3 |
| Junction temperature | Tj | | | 125 | °C | | 3 |
| Ambient temperature | Tamb | -40 | | 125 | °C | | 3 |
| Storage temperature | Tstg | -55 | | 125 | °C | | 3 |
| Electrostatic discharge voltage, contact | VESD | | | 10 | kV | IEC 61000-4-2; contact discharge | 3 |
| Electrostatic discharge voltage, air | VESD | | | 15 | kV | IEC 61000-4-2; air discharge | 3 |
| Electrostatic discharge voltage, HBM | VESD | | | 10 | kV | MIL-STD-883; human body model (HBM) | 3 |
| Dynamic resistance | Rdyn | | 1.5 | | Ω | IR = 10 A; tp = 100 ns; Tamb = 25 °C | 4 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | pet | | MIL-STD-883; human body model (HBM) - 10 kV [1] Device stressed with ten non-repetitive current pulses (8/20 µs exponential decay waveform according to IEC 61000-4-5). | 3 |
## CAD (KiCad official)
- Symbol: `PESD5V0F1BRLDYL`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2 (KiCad packages3D, STEP)
- 3D model files: `pesd5v0f1brldyl-etched.step` / `pesd5v0f1brldyl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pesd5v0f1brldyl.step` / `pesd5v0f1brldyl.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PESD5V0F1BRLD.pdf) (11 pp, sha256 `3eaa702a6535101c`, retrieved 2026-10-30, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pesd5v0f1brldyl-datasheet.pdf)