# PESD12VV1BL

**Nexperia** · ESD Protection Devices · DFN1006-2

PESD12VV1BL from Nexperia, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K1 | passive | Cathode 1 of the bidirectional ESD protection diode, one side of the protected line; the datasheet gives no pin-specific limits, so the device limiting values apply (VRWM 12 V, Cd 17 pF typ at VR = 0 V, IEC 61000-4-2 level 4 ESD protection up to 30 kV). |
| 2 | K2 | passive | Cathode 2 of the bidirectional ESD protection diode, the other side of the protected line; the datasheet gives no pin-specific limits, so the device limiting values apply (VRWM 12 V, Cd 17 pF typ at VR = 0 V, IEC 61000-4-2 level 4 ESD protection up to 30 kV). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | DFN1006-2 |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| rated peak pulse power | PPPM |  |  | 290 | W |  | 3 |
| rated peak pulse current | IPPM |  |  | 7.8 | A | tp = 8/20 µs | 3 |
| junction temperature | Tj |  |  | 150 | °C |  | 3 |
| ambient temperature | Tamb | -55 |  | 150 | °C |  | 3 |
| storage temperature | Tstg | -65 |  | 150 | °C |  | 3 |
| electrostatic discharge voltage | VESD |  |  | 30 | kV | IEC 61000-4-2; contact discharge | 3 |
| electrostatic discharge voltage | VESD |  |  | 400 | V | machine model | 3 |
| electrostatic discharge voltage | VESD |  |  | 10 | kV | MIL-STD-883; human body model (HBM) | 3 |
| reverse standoff voltage | VRWM |  |  | 12 | V | Tamb = 25 °C | 4 |
| breakdown voltage | VBR | 14.6 | 15.7 | 16.8 | V | IR = 5 mA; Tamb = 25 °C | 4 |
| reverse leakage current | IRM |  | 1 | 10 | nA | VRWM = 12 V; Tamb = 25 °C | 4 |
| diode capacitance | Cd |  | 17 | 25 | pF | f = 1 MHz; VR = 0 V; Tamb = 25 °C | 4 |
| clamping voltage | VCL |  |  | 22 | V | IPP = 1 A; tp = 8/20 μs; Tamb = 25 °C | 4 |
| clamping voltage | VCL |  |  | 38 | V | IPPM = 7.8 A; tp = 8/20 μs; Tamb = 25 °C | 4 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | pet |  | MIL-STD-883; human body model (HBM) - 10 kV [1] Device stressed with non-repetitive current pulses (8/20 µs exponential decay waveform according to IEC 61000-4-5). | 3 |

## CAD (KiCad official)

- Symbol: `PESD12VV1BL`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2 (KiCad packages3D, STEP)
- 3D model files: `pesd12vv1bl-etched.step` / `pesd12vv1bl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pesd12vv1bl.step` / `pesd12vv1bl.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PESD12VV1BL.pdf) (11 pp, sha256 `749acec013685fda`, retrieved 2026-10-21, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/pesd12vv1bl-datasheet.pdf)