component
PDTD114ETR
Public Made by Adomby adom
Nexperia Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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pdtd114etr: specified limits as data (metadata.characteristics, 23 rows from the datasheet)
2 files changed
+313
README.md+30@@ -21,6 +21,36 @@ PDTD114ETR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| collector-base voltage | VCBO | | | 50 | V | open emitter | 3 |+| collector-emitter voltage | VCEO | | | 50 | V | open base | 3 |+| emitter-base voltage | VEBO | | | 10 | V | open collector | 3 |+| input voltage positive | VI | -10 | | 50 | V | | 3 |+| output current | IO | | | 500 | mA | | 3 |+| total power dissipation | Ptot | | | 320 | mW | Tamb ≤ 25 °C; FR4 PCB single-sided 35 µm copper (note 1) | 3 |+| total power dissipation | Ptot | | | 460 | mW | FR4 PCB 4-layer copper, standard footprint (note 2) | 3 |+| junction temperature | Tj | | | 175 | °C | | 3 |+| ambient temperature | Tamb | -55 | | 175 | °C | | 3 |+| storage temperature | Tstg | -55 | | 175 | °C | | 3 |+| thermal resistance from junction to ambient | Rth(j-a) | | | 470 | K/W | in free air; FR4 PCB 35 µm copper, single-sided (note 1) | 4 |+| thermal resistance from junction to ambient | Rth(j-a) | | | 327 | K/W | in free air; FR4 PCB 4-layer copper (note 2) | 4 |+| collector-base breakdown voltage | V(BR)CBO | 50 | | | V | IC = 100 µA; IE = 0 A; Tamb = 25 °C | 5 |+| collector-emitter breakdown voltage | V(BR)CEO | 50 | | | V | IC = 10 mA; IB = 0 A; Tamb = 25 °C | 5 |+| collector-base cut-off current | ICBO | | | 100 | nA | VCB = 40 V; IE = 0 A; Tamb = 25 °C | 5 |+| collector-emitter cut-off current | ICEO | | | 0.5 | µA | VCE = 50 V; IB = 0 A; Tamb = 25 °C | 5 |+| emitter-base cut-off current | IEBO | | | 0.4 | mA | VEB = 5 V; IC = 0 A; Tamb = 25 °C | 5 |+| DC current gain | hFE | 70 | | | | VCE = 5 V; IC = 50 mA; Tamb = 25 °C | 5 |+| collector-emitter saturation voltage | VCEsat | | | 100 | mV | IC = 50 mA; IB = 2.5 mA; Tamb = 25 °C | 5 |+| off-state input voltage | VI(off) | 0.6 | 1 | 1.5 | V | VCE = 5 V; IC = 100 µA; Tamb = 25 °C | 5 |+| on-state input voltage | VI(on) | 1 | 1.9 | 3 | V | VCE = 0.3 V; IC = 20 mA; Tamb = 25 °C | 5 |+| bias resistor 1 (input) | R1 | 7 | 10 | 13 | kΩ | See Section 11: Test information (Table 8 resistor test conditions) | 5 |+| bias resistor ratio | R2/R1 | 0.9 | 1 | 1.1 | | See Section 11: Test information (Table 8 resistor test conditions) | 5 |+ ## CAD (KiCad official) - Symbol: `PDTD114ETR`
page.json+283@@ -133,6 +133,289 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "00cf6a4f5014c14d",+ "rows": [+ {+ "name": "collector-base voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "open emitter",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "collector-emitter voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "open base",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "emitter-base voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "open collector",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "input voltage positive",+ "symbol": "VI",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -10,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "output current",+ "symbol": "IO",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 320,+ "conditions": "Tamb ≤ 25 °C; FR4 PCB single-sided 35 µm copper (note 1)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 460,+ "conditions": "FR4 PCB 4-layer copper, standard footprint (note 2)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "ambient temperature",+ "symbol": "Tamb",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "thermal resistance from junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 470,+ "conditions": "in free air; FR4 PCB 35 µm copper, single-sided (note 1)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "thermal resistance from junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 327,+ "conditions": "in free air; FR4 PCB 4-layer copper (note 2)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "collector-base breakdown voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "V",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "IC = 100 µA; IE = 0 A; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "collector-emitter breakdown voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 mA; IB = 0 A; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "collector-base cut-off current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VCB = 40 V; IE = 0 A; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "collector-emitter cut-off current",+ "symbol": "ICEO",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "VCE = 50 V; IB = 0 A; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "emitter-base cut-off current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 0.4,+ "conditions": "VEB = 5 V; IC = 0 A; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "DC current gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 70,+ "typ": null,+ "max": null,+ "conditions": "VCE = 5 V; IC = 50 mA; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "collector-emitter saturation voltage",+ "symbol": "VCEsat",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "IC = 50 mA; IB = 2.5 mA; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "off-state input voltage",+ "symbol": "VI(off)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.6,+ "typ": 1,+ "max": 1.5,+ "conditions": "VCE = 5 V; IC = 100 µA; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "on-state input voltage",+ "symbol": "VI(on)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.9,+ "max": 3,+ "conditions": "VCE = 0.3 V; IC = 20 mA; Tamb = 25 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "bias resistor 1 (input)",+ "symbol": "R1",+ "kind": "electrical",+ "unit": "kΩ",+ "min": 7,+ "typ": 10,+ "max": 13,+ "conditions": "See Section 11: Test information (Table 8 resistor test conditions)",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "bias resistor ratio",+ "symbol": "R2/R1",+ "kind": "electrical",+ "unit": "",+ "min": 0.9,+ "typ": 1,+ "max": 1.1,+ "conditions": "See Section 11: Test information (Table 8 resistor test conditions)",+ "source_page": 5,+ "source": "datasheet"+ }+ ] } }, "variants": [],