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Contents

README

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PDTD114ETR

Nexperia · Digital Transistors · SOT-23

PDTD114ETR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I input Input (base) with absolute maximum voltage range from -10 V to +50 V.
2 GND power_in Emitter ground connection.
3 O output Output (collector) with absolute maximum ratings of 50 V collector-emitter voltage and 500 mA output current.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 50 V open emitter 3
collector-emitter voltage VCEO 50 V open base 3
emitter-base voltage VEBO 10 V open collector 3
input voltage positive VI -10 50 V 3
output current IO 500 mA 3
total power dissipation Ptot 320 mW Tamb ≤ 25 °C; FR4 PCB single-sided 35 µm copper (note 1) 3
total power dissipation Ptot 460 mW FR4 PCB 4-layer copper, standard footprint (note 2) 3
junction temperature Tj 175 °C 3
ambient temperature Tamb -55 175 °C 3
storage temperature Tstg -55 175 °C 3
thermal resistance from junction to ambient Rth(j-a) 470 K/W in free air; FR4 PCB 35 µm copper, single-sided (note 1) 4
thermal resistance from junction to ambient Rth(j-a) 327 K/W in free air; FR4 PCB 4-layer copper (note 2) 4
collector-base breakdown voltage V(BR)CBO 50 V IC = 100 µA; IE = 0 A; Tamb = 25 °C 5
collector-emitter breakdown voltage V(BR)CEO 50 V IC = 10 mA; IB = 0 A; Tamb = 25 °C 5
collector-base cut-off current ICBO 100 nA VCB = 40 V; IE = 0 A; Tamb = 25 °C 5
collector-emitter cut-off current ICEO 0.5 µA VCE = 50 V; IB = 0 A; Tamb = 25 °C 5
emitter-base cut-off current IEBO 0.4 mA VEB = 5 V; IC = 0 A; Tamb = 25 °C 5
DC current gain hFE 70 VCE = 5 V; IC = 50 mA; Tamb = 25 °C 5
collector-emitter saturation voltage VCEsat 100 mV IC = 50 mA; IB = 2.5 mA; Tamb = 25 °C 5
off-state input voltage VI(off) 0.6 1 1.5 V VCE = 5 V; IC = 100 µA; Tamb = 25 °C 5
on-state input voltage VI(on) 1 1.9 3 V VCE = 0.3 V; IC = 20 mA; Tamb = 25 °C 5
bias resistor 1 (input) R1 7 10 13 kΩ See Section 11: Test information (Table 8 resistor test conditions) 5
bias resistor ratio R2/R1 0.9 1 1.1 See Section 11: Test information (Table 8 resistor test conditions) 5

CAD (KiCad official)

  • Symbol: PDTD114ETR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pdtd114etr-etched.step / pdtd114etr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pdtd114etr.step / pdtd114etr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 00cf6a4f5014c14d, retrieved 2026-09-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF