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PDTC144EU

Public Made by Adom

by adom

Nexperia Digital Transistors, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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PDTC144EU

Nexperia · Digital Transistors · SOT-323

PDTC144EU from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I input Input (base) pin of the bias network, with the input voltage limited to -10 V to 40 V per the Limiting values table.
2 GND power_in Ground (emitter) pin, the common reference of the transistor, with the emitter-base voltage rated at 10 V maximum (VEBO).
3 O output Output (collector) pin, rated at 50 V maximum collector-emitter voltage (VCEO) and 100 mA maximum output current (IO).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO 50 V open emitter 3
collector-emitter voltage VCEO 50 V open base 3
emitter-base voltage VEBO 10 V open collector 3
input voltage VI -10 40 V 3
output current IO 100 mA 3
total power dissipation Ptot 200 mW Tamb ≤ 25 °C 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -65 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance from junction to ambient Rth(j-a) 625 K/W in free air 4
collector-base breakdown voltage V(BR)CBO 50 V IC = 100 µA; IE = 0 A; Tamb = 25 °C 5
collector-emitter breakdown voltage V(BR)CEO 50 V IC = 2 mA; IB = 0 A; Tamb = 25 °C 5
collector-base cut-off current ICBO 100 nA VCB = 50 V; IE = 0 A; Tamb = 25 °C 5
collector-emitter cut-off current ICEO 100 nA VCE = 30 V; IB = 0 A; Tamb = 25 °C 5
collector-emitter cut-off current ICEO 5 µA VCE = 30 V; IB = 0 A; Tj = 150 °C 5
emitter-base cut-off current IEBO 90 µA VEB = 5 V; IC = 0 A; Tamb = 25 °C 5
DC current gain hFE 80 VCE = 5 V; IC = 5 mA; Tamb = 25 °C 5
collector-emitter saturation voltage VCEsat 150 mV IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C 5
off-state input voltage VI(off) 1.2 0.8 V VCE = 5 V; IC = 100 µA; Tamb = 25 °C 5
on-state input voltage VI(on) 3 1.6 V VCE = 0.3 V; IC = 2 mA; Tamb = 25 °C 5
bias resistor 1 (input) R1 33 47 61 kΩ 5
bias resistor ratio R2/R1 0.8 1 1.2 5
collector capacitance Cc 2.5 pF VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 5

CAD (KiCad official)

  • Symbol: PDTC144EU
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: pdtc144eu-etched.step / pdtc144eu-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pdtc144eu.step / pdtc144eu.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 e823bfb51eb33d51, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF