component
PDTC124EU
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Nexperia Digital Transistors, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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PDTC124EU
Nexperia · Digital Transistors · SOT-323
PDTC124EU from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I | input | Input pin, which is the base of the built-in transistor and connects to the bias resistor R1 (22 kΩ); the input voltage is rated from -10 V to 40 V. |
| 2 | GND | power_in | Ground pin, which is the emitter of the built-in transistor and is the common reference for the input and output. |
| 3 | O | output | Output pin, which is the collector of the built-in transistor; the output current is limited to 100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base breakdown voltage | V(BR)CBO | 50 | V | IC = 100 µA; IE = 0 A; Tamb = 25 °C | 5 | ||
| collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC = 2 mA; IB = 0 A; Tamb = 25 °C | 5 | ||
| collector-base cut-off current | ICBO | 100 | nA | VCB = 50 V; IE = 0 A; Tamb = 25 °C | 5 | ||
| collector-emitter cut-off current | ICEO | 100 | nA | VCE = 30 V; IB = 0 A; Tamb = 25 °C | 5 | ||
| collector-emitter cut-off current | ICEO | 5 | µA | VCE = 30 V; IB = 0 A; Tj = 150 °C | 5 | ||
| emitter-base cut-off current | IEBO | 180 | µA | VEB = 5 V; IC = 0 A; Tamb = 25 °C | 5 | ||
| DC current gain | hFE | 60 | VCE = 5 V; IC = 5 mA; Tamb = 25 °C | 5 | |||
| collector-emitter saturation voltage | VCEsat | 150 | mV | IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C | 5 | ||
| off-state input voltage | VI(off) | 1.1 | 0.8 | V | VCE = 5 V; IC = 100 µA; Tamb = 25 °C | 5 | |
| on-state input voltage | VI(on) | 2.5 | 1.7 | V | VCE = 0.3 V; IC = 5 mA; Tamb = 25 °C | 5 | |
| bias resistor 1 (input) | R1 | 15.4 | 22 | 28.6 | kΩ | 5 | |
| bias resistor ratio | R2/R1 | 0.8 | 1 | 1.2 | 5 | ||
| collector capacitance | Cc | 2.5 | pF | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 5 | ||
| collector-base voltage | VCBO | 50 | V | open emitter | 3 | ||
| collector-emitter voltage | VCEO | 50 | V | open base | 3 | ||
| emitter-base voltage | VEBO | 10 | V | open collector | 3 | ||
| input voltage | VI | -10 | 40 | V | 3 | ||
| output current | IO | 100 | mA | 3 | |||
| total power dissipation | Ptot | 200 | mW | Tamb ≤ 25 °C; device mounted on FR4 PCB | 3 | ||
| junction temperature | Tj | 150 | °C | 3 | |||
| ambient temperature | Tamb | -65 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 625 | K/W | in free air; device mounted on FR4 PCB | 4 |
CAD (KiCad official)
- Symbol:
PDTC124EU - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
pdtc124eu-etched.step/pdtc124eu-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pdtc124eu.step/pdtc124eu.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (11 pp, sha256
0398da5afc968d0e, retrieved 2026-10-18, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# PDTC124EU
**Nexperia** · Digital Transistors · SOT-323
PDTC124EU from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I | input | Input pin, which is the base of the built-in transistor and connects to the bias resistor R1 (22 kΩ); the input voltage is rated from -10 V to 40 V. |
| 2 | GND | power_in | Ground pin, which is the emitter of the built-in transistor and is the common reference for the input and output. |
| 3 | O | output | Output pin, which is the collector of the built-in transistor; the output current is limited to 100 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base breakdown voltage | V(BR)CBO | 50 | | | V | IC = 100 µA; IE = 0 A; Tamb = 25 °C | 5 |
| collector-emitter breakdown voltage | V(BR)CEO | 50 | | | V | IC = 2 mA; IB = 0 A; Tamb = 25 °C | 5 |
| collector-base cut-off current | ICBO | | | 100 | nA | VCB = 50 V; IE = 0 A; Tamb = 25 °C | 5 |
| collector-emitter cut-off current | ICEO | | | 100 | nA | VCE = 30 V; IB = 0 A; Tamb = 25 °C | 5 |
| collector-emitter cut-off current | ICEO | | | 5 | µA | VCE = 30 V; IB = 0 A; Tj = 150 °C | 5 |
| emitter-base cut-off current | IEBO | | | 180 | µA | VEB = 5 V; IC = 0 A; Tamb = 25 °C | 5 |
| DC current gain | hFE | 60 | | | | VCE = 5 V; IC = 5 mA; Tamb = 25 °C | 5 |
| collector-emitter saturation voltage | VCEsat | | | 150 | mV | IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C | 5 |
| off-state input voltage | VI(off) | | 1.1 | 0.8 | V | VCE = 5 V; IC = 100 µA; Tamb = 25 °C | 5 |
| on-state input voltage | VI(on) | 2.5 | 1.7 | | V | VCE = 0.3 V; IC = 5 mA; Tamb = 25 °C | 5 |
| bias resistor 1 (input) | R1 | 15.4 | 22 | 28.6 | kΩ | | 5 |
| bias resistor ratio | R2/R1 | 0.8 | 1 | 1.2 | | | 5 |
| collector capacitance | Cc | | | 2.5 | pF | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 5 |
| collector-base voltage | VCBO | | | 50 | V | open emitter | 3 |
| collector-emitter voltage | VCEO | | | 50 | V | open base | 3 |
| emitter-base voltage | VEBO | | | 10 | V | open collector | 3 |
| input voltage | VI | -10 | | 40 | V | | 3 |
| output current | IO | | | 100 | mA | | 3 |
| total power dissipation | Ptot | | | 200 | mW | Tamb ≤ 25 °C; device mounted on FR4 PCB | 3 |
| junction temperature | Tj | | | 150 | °C | | 3 |
| ambient temperature | Tamb | -65 | | 150 | °C | | 3 |
| storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| thermal resistance from junction to ambient | Rth(j-a) | | | 625 | K/W | in free air; device mounted on FR4 PCB | 4 |
## CAD (KiCad official)
- Symbol: `PDTC124EU`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `pdtc124eu-etched.step` / `pdtc124eu-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `pdtc124eu.step` / `pdtc124eu.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/PDTC124EU.pdf) (11 pp, sha256 `0398da5afc968d0e`, retrieved 2026-10-18, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/pdtc124eu-datasheet.pdf)