component

PDTC124ET

Public Made by Adom

by adom

Nexperia Digital Transistors, TO-236AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PDTC124ET

Nexperia · Digital Transistors · TO-236AB

PDTC124ET from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I input Input pin connected to the NPN transistor base through the built-in bias resistor R1 (22 kΩ nominal, 15.4 kΩ to 28.6 kΩ range).
2 GND power_in Ground pin connected to the transistor emitter, with emitter-base voltage limited to 10 V (VEBO).
3 O output Output pin connected to the transistor collector, rated for up to 100 mA output current and a 50 V collector-emitter voltage (VCEO, open base).

Key specifications

Parameter Value
Manufacturer Nexperia
Package TO-236AB
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage (open emitter) VCBO 50 V open emitter 3
collector-emitter voltage (open base) VCEO 50 V open base 3
emitter-base voltage (open collector) VEBO 10 V open collector 3
input voltage positive VI 40 V positive 3
input voltage negative VI -10 V negative 3
output current IO 100 mA 3
total power dissipation Ptot 250 mW Tamb ≤ 25 °C; device mounted on FR4 PCB 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -65 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air; device mounted on FR4 PCB, single-sided, 35 μm copper 4
collector-base breakdown voltage V(BR)CBO 50 V IC = 100 µA; IE = 0 A; Tamb = 25 °C 5
collector-emitter breakdown voltage V(BR)CEO 50 V IC = 2 mA; IB = 0 A; Tamb = 25 °C 5
collector-base cut-off current ICBO 100 nA VCB = 50 V; IE = 0 A; Tamb = 25 °C 5
collector-emitter cut-off current ICEO 100 nA VCE = 30 V; IB = 0 A; Tamb = 25 °C 5
collector-emitter cut-off current ICEO 5 µA VCE = 30 V; IB = 0 A; Tj = 150 °C 5
emitter-base cut-off current IEBO 180 µA VEB = 5 V; IC = 0 A; Tamb = 25 °C 5
DC current gain hFE 60 VCE = 5 V; IC = 5 mA; Tamb = 25 °C 5
collector-emitter saturation voltage VCEsat 100 mV IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C 5
off-state input voltage VI(off) 1.1 0.8 V VCE = 5 V; IC = 100 µA; Tamb = 25 °C 5
on-state input voltage VI(on) 2.5 1.7 V VCE = 0.3 V; IC = 5 mA; Tamb = 25 °C 5
bias resistor 1 (input) R1 15.4 22 28.6 kΩ 5
bias resistor ratio R2/R1 0.8 1 1.2 5
collector capacitance Cc 2.5 pF VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 5

CAD (KiCad official)

  • Symbol: PDTC124ET
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236AB (KiCad packages3D, STEP)
  • 3D model files: pdtc124et-etched.step / pdtc124et-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pdtc124et.step / pdtc124et.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 9feeecf456bbc7e8, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF